Memristive systems offer biomimetic functions that are being actively explored for energy‐efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D semiconductors enable unique gate‐tunable responses including the recent realization of hybrid memristor and transistor devices known as memtransistors. In particular, monolayer MoS2memtransistors exhibit nonvolatile memristive switching where the resistance of each state is modulated by a gate terminal. Here, further control over the memtransistor neuromorphic response through the introduction of a second gate terminal is gained. The resulting dual‐gated memtransistors allow tunability over the learning rate for non‐Hebbian training where the long‐term potentiation and depression synaptic behavior is dictated by gate biases during the reading and writing processes. Furthermore, the electrostatic control provided by dual gates provides a compact solution to the sneak current problem in traditional memristor crossbar arrays. In this manner, dual gating facilitates the full utilization and integration of memtransistor functionality in highly scaled crossbar circuits. Furthermore, the tunability of long‐term potentiation yields improved linearity and symmetry of weight update rules that are utilized in simulated artificial neural networks to achieve a 94% recognition rate of hand‐written digits.
Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness. In this work, we investigated a van der Waals heterostructure composited of 2D semiconducting MoS2and 2D ferroelectric CuInP2S6(CIPS) and NiPS3. Instead of using 2D ferroelectrics as conventional gate dielectric layers, here we applied CIPS and NiPS3as a ferroelectric capping layer, and investigated a long-distance coupling effect with the gate upon the sandwiched 2D MoS2channels. Our experimental results showed an outstanding enhancement of the electrodynamic gating in 2D MoS2transistors, represented by a significant reduction of subthreshold swing at room temperature. This was due to the coupling-induced polarization of 2D ferroelectrics at 2D semiconductor surface which led to an effective and dynamic magnification of the gate capacitance. Meanwhile, the electrostatic gating was remained steady after adding the ferroelectric capping layer, providing ease and compatibility for further implementation with existing circuit and system design. Our work demonstrates the long-distance coupling effect of 2D ferroelectrics in a capping architecture, reveals its impacts from both electrodynamic and electrostatic perspectives, and expands the potential of 2D ferroelectrics to further improve the performance of energy-efficient nanoelectronics.
more » « less- NSF-PAR ID:
- 10436931
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Nano Express
- Volume:
- 4
- Issue:
- 3
- ISSN:
- 2632-959X
- Page Range / eLocation ID:
- Article No. 035002
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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