Katzbaer, Rowan R., dos Santos Vieira, Francisco Marques, Dabo, Ismaila, Mao, Zhiqiang, and Schaak, Raymond E. Band Gap Narrowing in a High-Entropy Spinel Oxide Semiconductor for Enhanced Oxygen Evolution Catalysis. Retrieved from https://par.nsf.gov/biblio/10415214. Journal of the American Chemical Society 145.12 Web. doi:10.1021/jacs.2c12887.

Katzbaer, Rowan R., dos Santos Vieira, Francisco Marques, Dabo, Ismaila, Mao, Zhiqiang, & Schaak, Raymond E. Band Gap Narrowing in a High-Entropy Spinel Oxide Semiconductor for Enhanced Oxygen Evolution Catalysis. Journal of the American Chemical Society, 145 (12). Retrieved from https://par.nsf.gov/biblio/10415214. https://doi.org/10.1021/jacs.2c12887

Katzbaer, Rowan R., dos Santos Vieira, Francisco Marques, Dabo, Ismaila, Mao, Zhiqiang, and Schaak, Raymond E. "Band Gap Narrowing in a High-Entropy Spinel Oxide Semiconductor for Enhanced Oxygen Evolution Catalysis". Journal of the American Chemical Society 145 (12). Country unknown/Code not available. https://doi.org/10.1021/jacs.2c12887. https://par.nsf.gov/biblio/10415214.

@article{osti_10415214,
place = {Country unknown/Code not available}, title = {Band Gap Narrowing in a High-Entropy Spinel Oxide Semiconductor for Enhanced Oxygen Evolution Catalysis}, url = {https://par.nsf.gov/biblio/10415214}, DOI = {10.1021/jacs.2c12887}, abstractNote = {}, journal = {Journal of the American Chemical Society}, volume = {145}, number = {12}, author = {Katzbaer, Rowan R. and dos Santos Vieira, Francisco Marques and Dabo, Ismaila and Mao, Zhiqiang and Schaak, Raymond E.}, }