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Title: Thermal rectification in thin film metalattice structures: A computational study
Thermal rectification is an asymmetric heat transfer process where directionally dependent transport occurs along a given axis. In this work, geometric parameters that govern thermal rectification in solids composed of various semiconducting materials were investigated utilizing metalattice data for seven materials with pore sizes ranging between 2 and 30 nm. Using numerical simulation, thermal rectification was calculated at different thermal biases in single material systems, including silicon, cubic boron nitride, and diamond, among others. The largest thermal rectification for each material was exhibited in bilayer sample stacks that were thermally matched (i.e., the thermal resistance of each layer in the stack is equal in either forward or reverse direction). Of the materials tested, diamond provided the highest thermal rectification for all cases, with its best case achieving a thermal rectification of 57.2%. This novel thermal functionality will find application in advanced applications for temperature regulation, including resonator systems where thermal effects may significantly alter and/or degrade performance.  more » « less
Award ID(s):
2011839 1420620
NSF-PAR ID:
10415228
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
133
Issue:
11
ISSN:
0021-8979
Page Range / eLocation ID:
115101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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