Deng, Shan, Benkhelifa, Mahdi, Thomann, Simon, Faris, Zubair, Zhao, Zijian, Huang, Tzu-Jung, Xu, Yixin, Narayanan, Vijaykrishnan, Ni, Kai, and Amrouch, Hussam. Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications. Retrieved from https://par.nsf.gov/biblio/10417063. 2022 International Electron Devices Meeting (IEDM) . Web. doi:10.1109/IEDM45625.2022.10019400.

Deng, Shan, Benkhelifa, Mahdi, Thomann, Simon, Faris, Zubair, Zhao, Zijian, Huang, Tzu-Jung, Xu, Yixin, Narayanan, Vijaykrishnan, Ni, Kai, & Amrouch, Hussam. Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications. 2022 International Electron Devices Meeting (IEDM), (). Retrieved from https://par.nsf.gov/biblio/10417063. https://doi.org/10.1109/IEDM45625.2022.10019400

Deng, Shan, Benkhelifa, Mahdi, Thomann, Simon, Faris, Zubair, Zhao, Zijian, Huang, Tzu-Jung, Xu, Yixin, Narayanan, Vijaykrishnan, Ni, Kai, and Amrouch, Hussam. "Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications". 2022 International Electron Devices Meeting (IEDM) (). Country unknown/Code not available. https://doi.org/10.1109/IEDM45625.2022.10019400. https://par.nsf.gov/biblio/10417063.

@article{osti_10417063,
place = {Country unknown/Code not available}, title = {Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications}, url = {https://par.nsf.gov/biblio/10417063}, DOI = {10.1109/IEDM45625.2022.10019400}, abstractNote = {}, journal = {2022 International Electron Devices Meeting (IEDM)}, author = {Deng, Shan and Benkhelifa, Mahdi and Thomann, Simon and Faris, Zubair and Zhao, Zijian and Huang, Tzu-Jung and Xu, Yixin and Narayanan, Vijaykrishnan and Ni, Kai and Amrouch, Hussam}, }