The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect‐related luminescence in unintentionally doped GaN. The discovery of the mechanism responsible for this luminescence band and related defects in GaN took many years. Eventually, a consensus has been reached that the CNacceptor is the source of the YL band (the YL1 band) in GaN samples grown by several techniques. Previously suggested candidates, such as VGa, VGaON, CNON, and CNSiGa, should be discarded. At the same time, other defects (such as the VN, BeGa, and CaGa) may cause luminescence bands with positions and shapes not much different from the YL1 band. In GaN containing high concentrations of gallium vacancies, oxygen, and hydrogen, complexes containing these species may also contribute in the red–yellow part of the photoluminescence spectrum. The main controversies related to the YL band are resolved.
A systematic photoluminescence study of Be‐doped GaN grown by metal‐organic chemical vapor deposition is presented. All Be‐doped samples show the ultraviolet luminescence (UVLBe) band with a maximum at 3.38 eV and the yellow luminescence (YLBe) band with a maximum at ≈2.15 eV in GaN:Be having various concentrations of Be. The UVLBeband is attributed to the shallow state of the BeGaacceptor with a delocalized hole. The YLBeband is caused by a Be‐related defect, possibly the polaronic state of the BeGaacceptor with the charge transition level at 0.3 eV above the valence band. This broad band exhibits unusual properties. In particular, it always shows two steps in its thermal quenching. The second step at
- Award ID(s):
- 1904861
- NSF-PAR ID:
- 10418794
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- physica status solidi (b)
- Volume:
- 260
- Issue:
- 8
- ISSN:
- 0370-1972
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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GaN samples were implanted with Be and annealed in different conditions in order to activate the shallow BeGaacceptor. Low-temperature photoluminescence spectra were studied to find BeGa-related defects in the implanted samples. A yellow band with a maximum at about 2.2 eV (the YLBeband) was observed in nearly all samples protected with an AlN cap during the annealing and in samples annealed under ultrahigh N2pressure. A green band with a maximum at 2.35 eV (the GL2 band), attributed to the nitrogen vacancy, was the dominant defect-related luminescence band in GaN samples annealed without a protective AlN layer. The ultraviolet luminescence (UVLBe) band with a maximum at 3.38 eV attributed to the shallow BeGaacceptor with the ionization energy of 0.113 eV appeared in implanted samples only after annealing at high temperatures and ultrahigh N2pressure. This is the first observation of the UVLBeband in Be-implanted GaN, indicating successful activation of the BeGaacceptor.
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GaN samples are implanted with Be and F and annealed in different conditions to activate the BeGaacceptors. Photoluminescence spectra are studied to recognize the defects. The UVLBeband with a maximum at 3.38 eV and the YLBeband with a maximum at 2.15 eV are observed and associated with Be. The sequential implantation of Be and F ions into GaN at 600 °C reduces the concentration of nitrogen vacancies (
V N), as evidenced by the lack of the green luminescence band associated with the isolated nitrogen vacancy. First‐principles calculations are employed to find parameters of defects that can form after implantation. -
Morkoç, Hadis ; Fujioka, Hiroshi ; Schwarz, Ulrich T. (Ed.)We present the most recent results of photoluminescence (PL) studies, classification of defects in GaN and their properties. In particular, the yellow luminescence band (labeled YL1) with a maximum at 2.17 eV in undoped GaN grown by most common techniques is unambiguously attributed to the isolated CN acceptor. From the zero-phonon line (ZPL) at 2.59 eV, the /0 level of this acceptor is found at 0.916 eV above the valence band. The PL also reveals the 0/+ level of the CN at 0.33 eV above the valence band, which is responsible for the blue band (BLC), with the ZPL at 3.17 eV. Another yellow band (YL2) with a maximum at 2.3 eV, observed only in GaN grown by the ammonothermal method, is attributed to the VGa3H complex. The nitrogen vacancy (VN) causes the green luminescence (GL2) band. The VN also forms complexes with acceptors such as Mg, Be, and Ca. These complexes are responsible for the red luminescence bands (the RL2 family) in high-resistivity GaN. The results from PL studies are compared with theoretical predictions. Uncertainties in the parameters of defects are discussed.more » « less
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The dissociation of the CNHicomplex in GaN is studied in detail using photoluminescence measurements and first‐principles calculations. The blue luminescence (BL2) band with a maximum at 3.0 eV is caused by electron transitions from an excited state located at 0.02 eV below the conduction band to the ground state of the CNHidonor with the 0/+ level 0.15 eV above the valence band. The dissociation releases hydrogen atom, and the remaining CNdefect with the −/0 state at 0.92 eV above the valence band is responsible for the yellow band (YL1) with a maximum at about 2.2 eV. The dissociation of the CNHicomplex can be caused by the photoinduced defect reaction mechanism under UV illumination at low temperature (≈20 K), leading to the bleaching of the BL2 band and simultaneous rise in the YL1 band. The bleaching is reversible. Alternatively, the complex dissociates after annealing at temperatures above 600 °C. The activation energy of this process (3–4 eV, depending on the annealing geometry) corresponds to the removal of hydrogen from the sample and not to the dissociation of the complex itself.