Artificial synaptic devices made from natural biomaterials capable of emulating functions of biological synapses, such as synaptic plasticity and memory functions, are desirable for the construction of brain-inspired neuromorphic computing systems. The metal/dielectric/metal device structure is analogous to the pre-synapse/synaptic cleft/post-synapse structure of the biological neuron, while using natural biomaterials promotes ecologically friendly, sustainable, renewable, and low-cost electronic devices. In this work, artificial synaptic devices made from honey mixed with carbon nanotubes, honey-carbon nanotube (CNT) memristors, were investigated. The devices emulated spike-timing-dependent plasticity, with synaptic weight as high as 500%, and demonstrated a paired-pulse facilitation gain of 800%, which is the largest value ever reported. 206-level long-term potentiation (LTP) and long-term depression (LTD) were demonstrated. A conduction model was applied to explain the filament formation and dissolution in the honey-CNT film, and compared to the LTP/LTD mechanism in biological synapses. In addition, the short-term and long-term memory behaviors were clearly demonstrated by an array of 5 × 5 devices. This study shows that the honey-CNT memristor is a promising artificial synaptic device technology for applications in sustainable neuromorphic computing.
Artificial synaptic devices are the essential hardware component in emerging neuromorphic computing systems by mimicking biological synapse and brain functions. When made from natural organic materials such as protein and carbohydrate, they have potential to improve sustainability and reduce electronic waste by enabling environmentally‐friendly disposal. In this paper, a new natural organic memristor based artificial synaptic device is reported with the memristive film processed by a honey and carbon nanotube (CNT) admixture, that is, honey‐CNT memristor. Optical microscopy, scanning electron microscopy, and micro‐Raman spectroscopy are employed to analyze the morphology and chemical structure of the honey‐CNT film. The device demonstrates analog memristive potentiation and depression, with the mechanism governing these functions explained by the formation and dissolution of conductive paths due to the electrochemical metal filaments which are assisted by CNT clusters and bundles in the honey‐CNT film. The honey‐CNT memristor successfully emulates synaptic functionalities such as short‐term plasticity and its transition to long‐term plasticity for memory rehearsal, spatial summation, and shunting inhibition, and for the first time, the classical conditioning behavior for associative learning by mimicking the Pavlov's dog experiment. All these results testify that honey‐CNT memristor based artificial synaptic device is promising for energy‐efficient and eco‐friendly neuromorphic systems.
more » « less- Award ID(s):
- 2104976
- NSF-PAR ID:
- 10419267
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials Technologies
- Volume:
- 8
- Issue:
- 14
- ISSN:
- 2365-709X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Spiking neural network (SNN) in future neuromorphic architectures requires hardware devices to be not only capable of emulating fundamental functionalities of biological synapse such as spike-timing dependent plasticity (STDP) and spike-rate dependent plasticity (SRDP), but also biodegradable to address current ecological challenges of electronic waste. Among different device technologies and materials, memristive synaptic devices based on natural organic materials have emerged as the favourable candidate to meet these demands. The metal–insulator-metal structure is analogous to biological synapse with low power consumption, fast switching speed and simulation of synaptic plasticity, while natural organic materials are water soluble, renewable and environmental friendly. In this study, the potential of a natural organic material—honey-based memristor for SNNs was demonstrated. The device exhibited forming-free bipolar resistive switching, a high switching speed of 100 ns set time and 500 ns reset time, STDP and SRDP learning behaviours, and dissolving in water. The intuitive conduction models for STDP and SRDP were proposed. These results testified that honey-based memristive synaptic devices are promising for SNN implementation in green electronics and biodegradable neuromorphic systems.more » « less
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Resistive switching is a promising technology for artificial synapses, the most critical component and building block of a neural network for brain-inspired neuromorphic computing. The artificial synapse is capable of emulating a signal process and memory functions of biological synapses. The artificial synapse fabricated by natural bioorganic materials is essential for developing soft, flexible, and biocompatible electronics and sustainable, biodegradable, and environmentally friendly neuromorphic systems. In this work, a natural biomaterial—honey based resistive switching device—was demonstrated to emulate some important functionalities of biological synapses, including synaptic potentiation and depression, short-term and long-term memory, spatial summation, and shunting inhibition. The results indicate the potential of honey based resistive switching for artificial synaptic devices in renewable neuromorphic systems and bioelectronics.
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Abstract Memristive devices have demonstrated rich switching behaviors that closely resemble synaptic functions and provide a building block to construct efficient neuromorphic systems. It is demonstrated that resistive switching effects are controlled not only by the external field, but also by the dynamics of various internal state variables that facilitate the ionic processes. The internal temperature, for example, works as a second‐state variable to regulate the ion motion and provides the internal timing mechanism for the native implementation of timing‐ and rate‐based learning rules such as spike timing dependent plasticity (STDP). In this work, it is shown that the 2nd state‐variable in a Ta2O5‐based memristor, its internal temperature, can be systematically engineered by adjusting the material properties and device structure, leading to tunable STDP characteristics with different time constants. When combined with an artificial post‐synaptic neuron, the 2nd‐order memristor synapses can spontaneously capture the temporal correlation in the input streaming events.
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By mimicking biomimetic synaptic processes, the success of artificial intelligence (AI) has been astounding with various applications such as driving automation, big data analysis, and natural-language processing.[1-4] Due to a large quantity of data transmission between the separated memory unit and the logic unit, the classical computing system with von Neumann architecture consumes excessive energy and has a significant processing delay.[5] Furthermore, the speed difference between the two units also causes extra delay, which is referred to as the memory wall.[6, 7] To keep pace with the rapid growth of AI applications, enhanced hardware systems that particularly feature an energy-efficient and high-speed hardware system need to be secured. The novel neuromorphic computing system, an in-memory architecture with low power consumption, has been suggested as an alternative to the conventional system. Memristors with analog-type resistive switching behavior are a promising candidate for implementing the neuromorphic computing system since the devices can modulate the conductance with cycles that act as synaptic weights to process input signals and store information.[8, 9]
The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO2, Ta2O5, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO2) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO2as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.
In this work, we proposed SiO2-based memristor and investigated switching behaviors metallized with different reduction potentials by applying pure Cu and Ag, and their alloys with varied ratios. Heavily doped p-type silicon was chosen as BE in order to exclude any effects of the BE ions on the memristor performance. We previously reported that the selection of TE is crucial for achieving a high memory window and stable switching performance. According to the study which compares the roles of Cu (switching stabilizer) and Ag (large switching window performer) TEs for oxide memristors, we have selected the TE materials and their alloys to engineer the SiO2-based memristor characteristics. The Ag TE leads to a larger memory window of the SiO2memristor, but the device shows relatively large variation and less reliability. On the other hand, the Cu TE device presents uniform gradual switching behavior which is in line with our previous report that Cu can be served as a stabilizer, but with small on/off ratio.[9] These distinct performances with Cu and Ag metallization leads us to utilize a Cu/Ag alloy as the TE. Various compositions of Cu/Ag were examined for the optimization of the memristor TEs. With a Cu/Ag alloying TE with optimized ratio, our SiO2based memristor demonstrates uniform switching behavior and memory window for analog switching applications. Also, it shows ideal potentiation and depression synaptic behavior under the positive/negative spikes (pulse train).
In conclusion, the SiO2memristors with different metallization were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of memristor, we integrated Cu, Ag and Cu/Ag alloy as TEs and compared the switch characteristics. Our encouraging results clearly demonstrate that SiO2with Cu/Ag is a promising memristor device with synaptic switching behavior in neuromorphic computing applications.
Acknowledgement This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.
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