The mid-IR spectroscopic properties of E r 3 + doped low-phonon C s C d C l 3 and C s P b C l 3 crystals grown by the Bridgman technique have been investigated. Using optical excitations at ∼ 800 n m and ∼ 660 n m , both crystals exhibited IR emissions at ∼ 1.55 , ∼ 2.75 , ∼ 3.5 , and ∼ 4.5 µ m at room temperature. The mid-IR emission at 4.5 µm, originating from the 4 I 9 / 2 → 4 I 11 / 2 transition, showed a long emission lifetime of ∼ 11.6 m s for E r 3 + doped C s C d C l 3 , whereas E r 3 + doped C s P b C l 3 exhibited a shorter lifetime of ∼ 1.8 m s . The measured emission lifetimes of the 4 I 9 / 2 state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the 4 I 9 / 2 → 4 I 11 / 2 transition in E r 3 + doped C s C d C l 3 and C s P b C l 3 were determined to be ∼ 0.14 × 10 − 20 c m 2 and ∼ 0.41 × 10 − 20 c m 2 , respectively. The results of Judd–Ofelt analysis are presented and discussed.
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Ho 3+ doped low-phonon single crystals and chalcogenide glasses for mid-IR source application
A comparative study was conducted to investigate the 3.9 µm mid-IR emission properties of Ho 3+ doped NaYF 4 and CsCdCl 3 crystals as well as Ho 3+ doped Ga 2 Ge 5 S 13 glass. Following optical excitation at ∼890 nm, all the studied materials exhibited broad mid-IR emissions centered at ∼3.9 µm at room temperature. The mid-IR emission at 3.9 µm, originating from the 5 I 5 → 5 I 6 transition, showed long emission lifetime values of ∼16.5 ms and ∼1.61 ms for Ho 3+ doped CsCdCl 3 crystal and Ga 2 Ge 5 S 13 glass, respectively. Conversely, the Ho 3+ doped NaYF 4 crystal exhibited a relatively short lifetime of ∼120 µs. Temperature dependent decay time measurements were performed for the 5 I 5 excited state for all three samples. The results showed that the emission lifetimes of Ho 3+ :CsCdCl 3 and Ho 3+ :Ga 2 Ge 5 S 13 were nearly temperature independent over the range studied, while significant emission quenching of the 5 I 5 level was observed in Ho 3+ :NaYF 4 . The temperature dependence of the multi-phonon relaxation rate for 3.9 µm mid-IR emission in Ho 3+ :NaYF 4 crystal was determined. The room temperature stimulated emission cross-sections for all three samples were calculated using the Füchtbauer-Landenburg equation. Furthermore, the results of Judd-Ofelt analysis are presented and discussed.
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- Award ID(s):
- 1827820
- PAR ID:
- 10426555
- Date Published:
- Journal Name:
- Optical Materials Express
- Volume:
- 13
- Issue:
- 5
- ISSN:
- 2159-3930
- Page Range / eLocation ID:
- 1307
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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