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Title: Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga 2 O 3 Schottky Diodes

Theκ-Ga2O3polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films ofκ-Ga2O3has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.

 
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Award ID(s):
1856662
NSF-PAR ID:
10431944
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
The Electrochemical Society
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
12
Issue:
4
ISSN:
2162-8769
Page Range / eLocation ID:
Article No. 044009
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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