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β-Ga2O3is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Sinceβ-Ga2O3technology is still not mature, experimental study ofβ-Ga2O3is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations ofβ-Ga2O3devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga2O3diode, Schottky diode, and normally-off Ga2O3vertical FinFET. Besides the current-voltage (I-V) simulations, breakdown, capacitance-voltage (C-V), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study ofβ-Ga2O3devices using TCAD.
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Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga 2 O 3 Schottky Diodes
Theκ-Ga2O3polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films ofκ-Ga2O3has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.
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- Award ID(s):
- 1856662
- PAR ID:
- 10431944
- Publisher / Repository:
- The Electrochemical Society
- Date Published:
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Volume:
- 12
- Issue:
- 4
- ISSN:
- 2162-8769
- Page Range / eLocation ID:
- Article No. 044009
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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