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Title: Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga 2 O 3 Heterojunction Rectifiers and Ni/Au/Ga 2 O 3 Schottky Rectifiers

Neutrons generated through charge-exchange9Be (p; ni)9Be reactions, with energies ranging from 0–33 MeV and an average energy of ∼9.8 MeV were used to irradiate conventional Schottky Ga2O3rectifiers and NiO/Ga2O3p-n heterojunction rectifiers to fluences of 1.1–2.2 × 1014cm−2. The breakdown voltage was improved after irradiation for the Schottky rectifiers but was highly degraded for their NiO/Ga2O3counterparts. This may be a result of extended defect zones within the NiO. After irradiation, the switching characteristics were degraded and irradiated samples of both types could not survive switching above 0.7 A or 400 V, whereas reference samples were robust to 1 A and 1 kV. The carrier removal rate in both types of devices was ∼45 cm−1. The forward currents and on-state resistances were only slightly degraded by neutron irradiation.

 
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Award ID(s):
1856662
NSF-PAR ID:
10432297
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
The Electrochemical Society
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
12
Issue:
7
ISSN:
2162-8769
Page Range / eLocation ID:
Article No. 075004
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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