skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Phase-change materials based on amorphous equichalcogenides
Abstract Phase-change materials, demonstrating a rapid switching between two distinct states with a sharp contrast in electrical, optical or magnetic properties, are vital for modern photonic and electronic devices. To date, this effect is observed in chalcogenide compounds based on Se, Te or both, and most recently in stoichiometric Sb 2 S 3 composition. Yet, to achieve best integrability into modern photonics and electronics, the mixed S/Se/Te phase change medium is needed, which would allow a wide tuning range for such important physical properties as vitreous phase stability, radiation and photo-sensitivity, optical gap, electrical and thermal conductivity, non-linear optical effects, as well as the possibility of structural modification at nanoscale. In this work, a thermally-induced high-to-low resistivity switching below 200 °C is demonstrated in Sb-rich equichalcogenides (containing S, Se and Te in equal proportions). The nanoscale mechanism is associated with interchange between tetrahedral and octahedral coordination of Ge and Sb atoms, substitution of Te in the nearest Ge environment by S or Se, and Sb–Ge/Sb bonds formation upon further annealing. The material can be integrated into chalcogenide-based multifunctional platforms, neuromorphic computational systems, photonic devices and sensors.  more » « less
Award ID(s):
2106457
PAR ID:
10436332
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Scientific Reports
Volume:
13
Issue:
1
ISSN:
2045-2322
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Optical Materials)
    Abstract Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, a systematic study elucidating the cycling failure mechanisms of Ge2Sb2Se4Te (GSST) is performed, a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on‐chip photonic devices. Further a set of design rules building on insights into the failure mechanisms is proposed, and successfully implemented them to boost the endurance of the Ge2Sb2Se4Te (GSST) device to over 67 000 cycles. 
    more » « less
  2. ; ; ; ; ; ; ; ; ; ; et al (, Research Square - Nature Portfolio)
    Abstract Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and scalability but mostly limited to a binary response. Recent works have demonstrated electrical multi-level switching; however, they relied on the stochastic nucleation process to achieve partial crystallization with low demonstrated repeatability and cyclability. Here, we re-engineer waveguide-integrated microheaters to achieve precise spatial control of the temperature profile (i.e., hotspot) and, thus, switch deterministic areas of an embedded phase change material cell. We experimentally demonstrate this concept using a variety of foundry-processed doped-silicon microheaters on a silicon-on-insulator platform to trigger multi-step amorphization and reversible switching of Sb2Se3and Ge2Sb2Se4Te alloys. We further characterize the response of our microheaters using Transient Thermoreflectance Imaging. Our approach combines the deterministic control resulting from a spatially resolved glassy-crystalline distribution with the scalability of electro-thermal switching devices, thus paving the way to reliable multi-level switching towards robust reprogrammable phase-change photonic devices for analog processing and computing. 
    more » « less
  3. ; ; ; ; (, Optics Express)
    Phase change chalcogenides such as Ge2Sb2Te5(GST) have recently enabled advanced optical devices for applications such as in-memory computing, reflective displays, tunable metasurfaces, and reconfigurable photonics. However, designing phase change optical devices with reliable and efficient electrical control is challenging due to the requirements of both high amorphization temperatures and extremely fast quenching rates for reversible switching. Here, we use a Multiphysics simulation framework to model three waveguide-integrated microheaters designed to switch optical phase change materials. We explore the effects of geometry, doping, and electrical pulse parameters to optimize the switching speed and minimize energy consumption in these optical devices. 
    more » « less
  4. ; ; (, Optical Materials Express)
    The objective of this Opinion is to stimulate new research into materials that can meet the needs of tomorrow’s programmable photonics components. Herein, we argue that the inherent property portfolios of the common telluride phase change materials, which have been successfully applied in data storage technologies, are unsuitable for most emerging programmable photonics applications. We believe that newer PCMs with wider bandgaps, such as Sb2S3, Sb2Se3, and Ge2Sb2Se4Te (GSST), can be optimized to meet the demands of holographic displays, optical neural network memories, and beam steering devices. 
    more » « less
  5. ; ; ; ; ; ; ; ; (, Optical Materials Express)
    Phase change materials (PCMs) are important building blocks in solid-state memory and photonic devices. Solution-based processing promises large-area, cost-effective, conformal coating of optical PCMs (O-PCMs) for photonic applications. In this work, a solution processing route was developed for Ge2Sb2Se4Te1(GSST), a target PCM of interest due to its large optical contrast, broadband transparency, and improved glass-forming capability. An alkahest solvent mixture of ethanedithiol and ethylenediamine was used as a solvent system to fabricate solution-derived GSST thin films and films from these solutions were prepared and characterized using SEM, XRD, and Raman spectroscopy. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email