A high efficiency, high brightness, and robust micro or sub-microscale red light emitting diode (LED) is an essential, yet missing, component of the emerging virtual reality and future ultrahigh resolution mobile displays. We report, for the first time, to our knowledge, the demonstration of an N-polar InGaN/GaN nanowire sub-microscale LED emitting in the red spectrum that can overcome the efficiency cliff of conventional red-emitting micro-LEDs. We show that the emission wavelengths of N-polar InGaN/GaN nanowires can be progressively shifted from yellow to orange and red, which is difficult to achieve for conventional InGaN quantum wells or Ga-polar nanowires. Significantly, the optical emission intensity can be enhanced by more than one order of magnitude by employing an
The V-defect is a naturally occurring inverted hexagonal pyramid structure that has been studied in GaN and InGaN growth since the 1990s. Strategic use of V-defects in pre-quantum well superlattices or equivalent preparation layers has enabled record breaking efficiencies for green, yellow, and red InGaN light emitting diodes (LEDs) utilizing lateral injection of holes through the semi-polar sidewalls of the V-defects. In this article, we use advanced characterization techniques such as scattering contrast transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, x-ray fluorescence maps, and atom probe tomography to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs grown on (0001) patterned sapphire and (111) Si substrates. We identify two distinct types of V-defects. The “large” V-defects are those that form in the pre-well superlattice and promote hole injection, usually nucleating on mixed (Burgers vector b=±a±c) character threading dislocations. In addition, “small” V-defects often form in the multi-quantum well region and are believed to be deleterious to high-efficiency LEDs by providing non-radiative pathways. The small V-defects are often associated with basal plane stacking faults or stacking fault boxes. Furthermore, we show through scattering contrast transmission electron microscopy that during V-defect filling, the threading dislocation, which runs up the center of the V-defect, will “bend” onto one of the six {101¯1} semi-polar planes. This result is essential to understanding non-radiative recombination in V-defect engineered LEDs.
more » « less- PAR ID:
- 10440597
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 133
- Issue:
- 3
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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