skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: In-plane hyperbolic polariton tuners in terahertz and long-wave infrared regimes
Abstract One of the main bottlenecks in the development of terahertz (THz) and long-wave infrared (LWIR) technologies is the limited intrinsic response of traditional materials. Hyperbolic phonon polaritons (HPhPs) of van der Waals semiconductors couple strongly with THz and LWIR radiation. However, the mismatch of photon − polariton momentum makes far-field excitation of HPhPs challenging. Here, we propose an In-Plane Hyperbolic Polariton Tuner that is based on patterning van der Waals semiconductors, here α-MoO 3 , into ribbon arrays. We demonstrate that such tuners respond directly to far-field excitation and give rise to LWIR and THz resonances with high quality factors up to 300, which are strongly dependent on in-plane hyperbolic polariton of the patterned α-MoO 3 . We further show that with this tuner, intensity regulation of reflected and transmitted electromagnetic waves, as well as their wavelength and polarization selection can be achieved. Our results can help the development of THz and LWIR miniaturized devices.  more » « less
Award ID(s):
2128240
PAR ID:
10441127
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Nature Communications
Volume:
14
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract Phonon polaritons, the hybrid quasiparticles resulting from the coupling of photons and lattice vibrations, have gained significant attention in the field of layered van der Waals heterostructures. Particular interest has been paid to hetero‐bicrystals composed of molybdenum oxide (MoO3) and hexagonal boron nitride (hBN), which feature polariton dispersion tailorable via avoided polariton mode crossings. In this work, the polariton eigenmodes in MoO3‐hBN hetero‐bicrystals self‐assembled on ultrasmooth gold are systematically studied using synchrotron infrared nanospectroscopy. It is experimentally demonstrated that the spectral gap in bicrystal dispersion and corresponding regimes of negative refraction can be tuned by material layer thickness, and these results are quantitatively matched with a simple analytic model. Polaritonic cavity modes and polariton propagation along “forbidden” directions are also investigated in microscale bicrystals, which arise from the finite in‐plane dimension of the synthesized MoO3micro‐ribbons. The findings shed light on the unique dispersion properties of polaritons in van der Waals heterostructures and pave the way for applications leveraging deeply sub‐wavelength mid‐infrared light‐matter interactions. 
    more » « less
  2. Abstract Electromagnetic hyperbolicity has driven key functionalities in nanophotonics, including super-resolution imaging, efficient energy control, and extreme light manipulation. Central to these advances are hyperbolic polaritons—nanometer-scale light-matter waves—spanning multiple energy-momentum dispersion orders with distinct mode profiles and incrementally high optical momenta. In this work, we report the mode conversion of hyperbolic polaritons across different dispersion orders by breaking the structure symmetry in engineered step-shape van der Waals (vdW) terraces. The mode conversion from the fundamental to high-order hyperbolic polaritons is imaged using scattering-type scanning near-field optical microscopy (s-SNOM) on both hexagonal boron nitride (hBN) and alpha-phase molybdenum trioxide (α-MoO3) vdW terraces. Our s-SNOM data, augmented with electromagnetics simulations, further demonstrate the alteration of polariton mode conversion by varying the step size of vdW terraces. The mode conversion reported here offers a practical approach toward integrating previously independent different-order hyperbolic polaritons with ultra-high momenta, paving the way for promising applications in nano-optical circuits, sensing, computation, information processing, and super-resolution imaging. 
    more » « less
  3. Abstract In recent years, the excitation of surface phonon polaritons (SPhPs) in van der Waals materials received wide attention from the nanophotonics community. Alpha-phase Molybdenum trioxide (α-MoO3), a naturally occurring biaxial hyperbolic crystal, emerged as a promising polaritonic material due to its ability to support SPhPs for three orthogonal directions at different wavelength bands (range 10–20μm). Here, we report on the fabrication, structural, morphological, and optical IR characterization of large-area (over 1 cm2size)α-MoO3polycrystalline film deposited on fused silica substrates by pulsed laser deposition. Due to the random grain distribution, the thin film does not display any optical anisotropy at normal incidence. However, the proposed fabrication method allows us to achieve a singleα-phase, preserving the typical strong dispersion related to the phononic response ofα-MoO3flakes. Remarkable spectral properties of interest for IR photonics applications are reported. For instance, a polarization-tunable reflection peak at 1006 cm−1with a dynamic range of ΔR= 0.3 and a resonanceQ-factor as high as 53 is observed at 45° angle of incidence. Additionally, we report the fulfillment of an impedance matching condition with the SiO2substrate leading to a polarization-independent almost perfect absorption condition (R< 0.01) at 972 cm−1which is maintained for a broad angle of incidence. In this framework our findings appear extremely promising for the further development of mid-IR lithography-free, scalable films, for efficient and large-scale sensors, filters, thermal emitters, and label-free biochemical sensing devices operating in the free space, using far-field detection setups. 
    more » « less
  4. Germanium sulfide (GeS) and germanium selenide (GeSe) are layered 2D van der Waals materials that belong to a family of group-IV monochalcogenides. These semiconductors have high carrier mobilities and moderate band gaps in the near infrared. Additionally, we have demonstrated that above gap photoexcitation results in ultrafast surface photocurrents and emission of THz pulses due to a spontaneous ferroelectric polarization that breaks inversion symmetry in the monolayer. Beyond the sub-picosecond time scales of shift currents, photoexcited carriers in both materials result in long-lived transient conductivity. We find that 800 nm excitation results in longer lived free photocarriers, persisting for hundreds of picoseconds to several nanoseconds, compared to tens to hundreds of picoseconds lifetimes for 400 nm excitation. Here, we report on tailoring the free photoexcited carrier lifetimes by intercalation of zero-valent Cu into the van der Waals gaps of GeS and GeSe. Density functional theory calculations predict that Cu atoms introduce mid-gap states. We demonstrate that intercalating only ∼3 atomic % of zero-valent Cu reduces the carrier lifetime by as much as two-to-four-fold, raising the prospects of these materials being used for high-speed optoelectronics. 
    more » « less
  5. Abstract Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2(FGT) are reported. The orientation of the exchange bias is along the in‐plane easy axis of CrSBr, perpendicular to the out‐of‐plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in‐plane exchange bias provides sufficient symmetry breaking to allow deterministic spin–orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non‐zero exchange bias at 30 K. 
    more » « less