Abstract High‐temperature, high‐velocity water vapor (steam‐jet) exposures were conducted on Y2O3, Y2SiO5, Y2Si2O7, and SiO2for 60 hours at 1400°C. Volatility of Y2O3was not observed. Phase‐pure Y2SiO5exhibited SiO2loss forming Y2O3and porosity. A mixed porous and dense Y2SiO5layer formed on the surface of Y2Si2O7due to SiO2depletion. The mechanisms and kinetics of the reaction between SiO2and H2O(g) to form Si(OH)4(g) from Y2SiO5, Y2Si2O7, and SiO2are discussed.
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Refractive Index Tuning of All-Inorganic TiO 2 Nanocrystal-Based Films and High Aspect Ratio Nanostructures Using Atomic Layer Deposition: Implications for High-Throughput Fabrication of Metalenses
- Award ID(s):
- 2122654
- PAR ID:
- 10445585
- Date Published:
- Journal Name:
- ACS Applied Nano Materials
- Volume:
- 6
- Issue:
- 3
- ISSN:
- 2574-0970
- Page Range / eLocation ID:
- 2009 to 2019
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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