How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-
The discovery of hydrogen‐induced electron localization and highly insulating states in d‐band electron correlated perovskites has opened a new paradigm for exploring novel electronic phases of condensed matters and applications in emerging field‐controlled electronic devices (e.g., Mottronics). Although a significant understanding of doping‐tuned transport properties of single crystalline correlated materials exists, it has remained unclear how doping‐controlled transport properties behave in the presence of planar defects. The discovery of an unexpected high‐concentration doping effect in defective regions is reported for correlated nickelates. It enables electronic conductance by tuning the Fermi‐level in Mott–Hubbard band and shaping the lower Hubbard band state into a partially filled configuration. Interface engineering and grain boundary designs are performed for H
- Award ID(s):
- 1706815
- NSF-PAR ID:
- 10458693
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 32
- Issue:
- 6
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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