Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large [Formula: see text] and [Formula: see text] optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3 dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we de-multiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.
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Integrated on Chip Platform with Quantum Emitters in Layered Materials
Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort is devoted to engineering on‐chip systems from 3D crystals such as diamond or gallium arsenide. In this study, room‐temperature coupling is demonstrated of quantum emitters embedded in layered hexagonal boron nitride to an on‐chip aluminum nitride waveguide. 1.35% light coupling efficiency is achieved in the device and transmission of single photons through the waveguide is demonstrated. The results serve as foundation for integrating layered materials to on‐chip components and realizing integrated quantum photonic circuitry.
more » « less- NSF-PAR ID:
- 10459220
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 7
- Issue:
- 23
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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