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Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High-quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS 3 and its Ruddlesden–Popper phase Ba 3 Zr 2 S 7 by a flux method. X-ray diffraction analyses showed the space group of Pnma with lattice constants of a = 7.056(3) Å, b = 9.962(4) Å, and c = 6.996(3) Å for BaZrS 3 and P 4 2 / mnm with a = 7.071(2) Å, b = 7.071(2) Å, and c = 25.418(5) Å for Ba 3 Zr 2 S 7 . Rocking curves with full width at half maximum of 0.011° for BaZrS 3 and 0.027° for Ba 3 Zr 2 S 7 were observed. Pole figure analysis, scanning transmission electron microscopy images, and electron diffraction patterns also establish the high quality of the grown crystals. The octahedral tilting in the corner-sharing octahedral network is analyzed by extracting the torsion angles.
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Solution-phase synthesis of the chalcogenide perovskite barium zirconium sulfide as colloidal nanomaterials
Chalcogenide perovskites such as BaZrS 3 have promising optoelectronic properties. Methods to produce these materials at low temperatures, especially in the solution phase, are currently scarce. We describe a solution-phase synthesis of colloidal nanoparticles of BaZrS 3 using reactive metal amide precursors. The nanomaterials are crystallographically and spectroscopically characterized.
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- Award ID(s):
- 2004421
- PAR ID:
- 10462628
- Date Published:
- Journal Name:
- Chemical Communications
- Volume:
- 58
- Issue:
- 75
- ISSN:
- 1359-7345
- Page Range / eLocation ID:
- 10512 to 10515
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract The making of BaZrS3thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS3forms in the orthorhombic distorted‐perovskite structure with corner‐sharing ZrS6octahedra. The single‐step MBE process results in films smooth on the atomic scale, with near‐perfect BaZrS3stoichiometry and an atomically sharp interface with the LaAlO3substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self‐assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated‐cube‐on‐cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high‐quality epitaxial thin films, as has been long‐established for other systems including Si‐Ge, III‐Vs, and II‐VIs. The methods demonstrated here also represent a revival of gas‐source chalcogenide MBE.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D2CC03494H
