Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
- NSF-PAR ID:
- 10463817
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- Crystal Growth & Design
- Volume:
- 23
- Issue:
- 10
- ISSN:
- 1528-7483
- Format(s):
- Medium: X Size: p. 7010-7025
- Size(s):
- ["p. 7010-7025"]
- Sponsoring Org:
- National Science Foundation
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