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Title: Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
NSF-PAR ID:
10463817
Author(s) / Creator(s):
 ;  ;  ;  ;  
Publisher / Repository:
American Chemical Society
Date Published:
Journal Name:
Crystal Growth & Design
Volume:
23
Issue:
10
ISSN:
1528-7483
Format(s):
Medium: X Size: p. 7010-7025
Size(s):
["p. 7010-7025"]
Sponsoring Org:
National Science Foundation
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