An official website of the United States government
Computational prediction of good thermoelectric (TE) performance in several n-type doped Zintl phases, combined with successful experimental realization, has sparked interest in discovering new n-type dopable members of this family of materials. However, most known Zintls are typically only p-type dopable; prior successes in finding n-type Zintl phases have been largely serendipitous. Here, we go beyond previously synthesized Zintl phases and perform chemical substitutions in known n-type dopable ABX Zintl phases to discover new ones. We use first-principles calculations to predict their stability, potential for TE performance as well as their n-type dopability. Using this approach, we find 17 new ABX Zintl phases in the KSnSb structure type that are predicted to be stable. Several of these newly predicted phases (KSnBi, RbSnBi, NaGeP) are found to exhibit promising n-type TE performance and are n-type dopable. We propose these compounds for further experimental studies, especially KSnBi and RbSnBi, which are both predicted to be good TE materials with high electron concentrations due to self-doping by native defects, when grown under alkali-rich conditions.
more »
« less
The Potential of Arsenic‐based Zintl Phases as Thermoelectric Materials: Structure & Thermoelectric Properties
Abstract Zintl phase thermoelectric materials have generated tremendous interest due to possessing structural features conducive to high thermoelectric performances. On the other hand, both arsenic and arsenic‐based compounds have become attractive in electronics due to having interesting properties like narrow bandgap, tunable carrier concentration, and non‐centrosymmetric structures. The structure of arsenic compounds plays a telling role in determining their efficiency as thermoelectric materials. They also show the scope to be doped as both p‐ and n‐type conduction providing exciting new materials with applications as a full module. These attributes make them appealing as thermoelectric materials for further research. This short review is an overview of the different structures of arsenic‐based Zintl ternary materials that have potential to be excellent thermoelectric materials.
more »
« less
- Award ID(s):
- 2307231
- PAR ID:
- 10465305
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Zeitschrift für anorganische und allgemeine Chemie
- Volume:
- 649
- Issue:
- 21
- ISSN:
- 0044-2313
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
High-throughput calculations (first-principles density functional theory and semi-empirical transport models) have the potential to guide the discovery of new thermoelectric materials. Herein we have computationally assessed the potential for thermoelectric performance of 145 complex Zintl pnictides. Of the 145 Zintl compounds assessed, 17% show promising n-type transport properties, compared with only 6% showing promising p-type transport. We predict that n-type Zintl compounds should exhibit high mobility μ n while maintaining the low thermal conductivity κ L typical of Zintl phases. Thus, not only do candidate n-type Zintls outnumber their p-type counterparts, but they may also exhibit improved thermoelectric performance. From the computational search, we have selected n-type KAlSb 4 as a promising thermoelectric material. Synthesis and characterization of polycrystalline KAlSb 4 reveals non-degenerate n-type transport. With Ba substitution, the carrier concentration is tuned between 10 18 and 10 19 e − cm −3 with a maximum Ba solubility of 0.7% on the K site. High temperature transport measurements confirm a high μ n (50 cm 2 V −1 s −1 ) coupled with a near minimum κ L (0.5 W m −1 K −1 ) at 370 °C. Together, these properties yield a zT of 0.7 at 370 °C for the composition K 0.99 Ba 0.01 AlSb 4 . Based on the theoretical predictions and subsequent experimental validation, we find significant motivation for the exploration of n-type thermoelectric performance in other Zintl pnictides.more » « less
-
The Mg 3 Sb 2− x Bi x family has emerged as the potential candidates for thermoelectric applications due to their ultra-low lattice thermal conductivity ( κ L ) at room temperature (RT) and structural complexity. Here, using ab initio calculations of the electron-phonon averaged (EPA) approximation coupled with Boltzmann transport equation (BTE), we have studied electronic, phonon and thermoelectric properties of Mg 3 Sb 2− x Bi x (x = 0, 1, and 2) monolayers. In violation of common mass-trend expectations, increasing Bi element content with heavier Zintl phase compounds yields an abnormal change in κ L in two-dimensional Mg 3 Sb 2− x Bi x crystals at RT (∼0.51, 1.86, and 0.25 W/mK for Mg 3 Sb 2 , Mg 3 SbBi, and Mg 3 Bi 2 ). The κ L trend was detailedly analyzed via the phonon heat capacity, group velocity and lifetime parameters. Based on quantitative electronic band structures, the electronic bonding through the crystal orbital Hamilton population (COHP) and electron local function analysis we reveal the underlying mechanism for the semiconductor-semimetallic transition of Mg 3 Sb 2-− x Bi x compounds, and these electronic transport properties (Seebeck coefficient, electrical conductivity, and electronic thermal conductivity) were calculated. We demonstrate that the highest dimensionless figure of merit ZT of Mg 3 Sb 2− x Bi x compounds with increasing Bi content can reach ∼1.6, 0.2, and 0.6 at 700 K, respectively. Our results can indicate that replacing heavier anion element in Zintl phase Mg 3 Sb 2− x Bi x materials go beyond common expectations (a heavier atom always lead to a lower κ L from Slack’s theory), which provide a novel insight for regulating thermoelectric performance without restricting conventional heavy atomic mass approach.more » « less
-
Computations have predicted good thermoelectric performance for a number of Zintl phases when doped n-type. Combined with the successful experimental realization of n-type KGaSb 4 , KAlSb 4 , and Mg 3 Sb 2 with zT ≳ 1, this has fueled efforts to discover novel n-type dopable Zintl phases. However, a majority of Zintl phases exhibit strong proclivity toward p-type doping and prior successes in finding n-type dopable Zintls were largely serendipitous. Herein we use modern first-principles defect calculations to study trends in the dopability of Zintl pnictides and find that the average oxidation state of the anion is a useful chemical guide to identify novel n-type dopable phases. Specifically, we observe that Zintl pnictides with average oxidation of the anion near −1 are n-type dopable. The trend is mainly a consequence of the high formation energy of native acceptor defects ( e.g. cation vacancies) and the resulting absence of charge (electron) compensation. Using the oxidation state guide in conjunction with a descriptor of thermoelectric performance, we conduct a large-scale materials search and identify promising candidates that are n-type dopable.more » « less
-
Abstract Eu5Sn2As6is a Zintl phase crystalizing in the orthorhombic space groupPbamwith one‐dimensional chains of corner‐shared SnAs4tetrahedra running in thec‐direction. Eu5Sn2As6has an impressive room temperature Seebeck of >100 μV/K and < – 100 μV/K at 600 K crossing fromp‐ ton‐type at 650 K. The maximum thermoelectric figure of merit,zT, for Eu5Sn2As6is small (0.075), comparable to that of the Zintl phase Ca5Al2Sb6whose thermoelectric performance was improved by doping Na onto the Ca sites. In this study, we show that the thermoelectric properties of Eu5Sn2As6can be improved by substituting with K or La. The series Eu5‐xKxSn2As6provides an increase in maximumzTof 0.22 forx=0.15 due to a decrease resistivity while the onset of bipolar conduction systematically increases in temperature. Upon La substitution, Eu5‐xLaxSn2As6results in a newn‐type Zintl phase across the temperature range of 300–800 K.more » « less
