Wang, C., Victor, J., Saha, A. K., Chen, X., Si, M., Sharma, T., Roy, K., Ye, P. D., and Gupta, S. K. FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. Retrieved from https://par.nsf.gov/biblio/10467369. Web. doi:10.1109/DRC58590.2023.10187042.

Wang, C., Victor, J., Saha, A. K., Chen, X., Si, M., Sharma, T., Roy, K., Ye, P. D., & Gupta, S. K. FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. Retrieved from https://par.nsf.gov/biblio/10467369. https://doi.org/10.1109/DRC58590.2023.10187042

Wang, C., Victor, J., Saha, A. K., Chen, X., Si, M., Sharma, T., Roy, K., Ye, P. D., and Gupta, S. K. "FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy". Country unknown/Code not available: IEEE. https://doi.org/10.1109/DRC58590.2023.10187042. https://par.nsf.gov/biblio/10467369.

@article{osti_10467369,
place = {Country unknown/Code not available}, title = {FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy}, url = {https://par.nsf.gov/biblio/10467369}, DOI = {10.1109/DRC58590.2023.10187042}, abstractNote = {}, journal = {}, publisher = {IEEE}, author = {Wang, C. and Victor, J. and Saha, A. K. and Chen, X. and Si, M. and Sharma, T. and Roy, K. and Ye, P. D. and Gupta, S. K.}, }