Semitransparent organic photovoltaics (ST‐OPVs) provide a potentially facile route for some applications in building integrated photovoltaics. One of the challenges in developing large‐scale, printable ST‐OPVs is to address the need for high‐performance and fully solution‐processed top electrodes, allowing the replacement of the evaporated thin metallic films (Ag, Au, and Al). Silver nanowire (AgNW) is considered a promising candidate for the substitution due to its excellent transparency, conductivity, and solution processability. Herein, a novel bimodal AgNW (AgNW‐BM) electrode is reported, comprising AgNWs of two different aspect ratios. It is shown that the AgNW‐BM film achieves lower sheet resistance and higher visible transmittance than each monodisperse AgNW film, respectively. Furthermore, ST‐OPVs based on PTB7‐Th:IEICO‐4F with AgNW‐BM top electrodes are fabricated, which can obtain a maximum power conversion efficiency (PCE) of 7.49% with an average visible transmittance (AVT) of 33%. The ST‐devices also demonstrate an enhanced reproducibility and excellent color‐rendering index of 90. In addition, the bimodal top electrode is successfully implemented in the PM6:Y6 system with a higher PCE of 9.79% and with an AVT of 23%, demonstrating the universality for various semiconductor systems. Our work provides a simple strategy to realize fully solution‐processed, highly efficient ST‐OPVs.
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Understanding chemical degradation at the interface between different layers in an organic photovoltaic device (OPV) is crucial to improving the long‐term stability of OPVs. Herein, molecular‐level insights are provided into the impact of different metal top electrodes on the interfacial morphology and stability of photoactive layers in PM6:Y6 bulk‐heterojunction (BHJ) OPVs. OPVs with an aluminum (Al) top electrode exhibit inferior stability compared to silver (Ag) electrode devices upon thermal annealing, whereby thermal stress induces the diffusion of both Al and Ag atoms to the PM6:Y6 BHJ layer. The diffused Al atoms cause surface recombination at the interface between the photoactive layer and an interlayer. Specifically, X‐ray photoelectron spectroscopy suggests the different local chemical environments of PM6 and Y6 moieties in PM6:Y6/Al‐contact devices. These results are corroborated by solid‐state nuclear magnetic resonance and electron paramagnetic resonance spectroscopy measurements, indicating the formation of ionic and organo‐metallic‐like species at the sub‐layers of the PM6:Y6 BHJ morphology, which are estimated to be less than 5 wt% of the PM6:Y6/Al blend. By comparison, the Ag atoms do not adversely affect PM6:Y6 BHJ morphology and the associated device physics. The investigation of reactive electrode‐BHJ interfaces by multiscale characterization techniques and device physics is expected to provide guidance to future interfacial engineering strategies to develop stable and efficient OPVs.
more » « less- NSF-PAR ID:
- 10472859
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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null (Ed.)The synthesis, characterization and incorporation of fullerene derivatives bearing primary, secondary and tertiary nitrogen atoms, which possess different basicities, in perovskite solar cells (PSCs), is reported. In this work, we tested the compounds as conventional electron transporting materials (ETMs) in a single layer with phenyl-C 61 -butyric acid methyl ester (PC 61 BM) as control. Additionally, we tested the idea of separating the ETM into two different layers: a thin electron extracting layer (EEL) at the interface with the perovskite, and an electron transporting layer (ETL) to transport the electrons to the Ag electrode. The compounds in this work were also tested as EELs with C 60 as ETL on top. Our results show that the new fullerenes perform better as EELs than as ETMs. A maximum power conversion efficiency (PCE) value of 18.88% was obtained for a device where a thin layer (∼3 nm) of BPy-C 60 was used as EEL, a higher value than that of the control device (16.70%) with only pure C 60 . Increasing the layer thicknesses led to dramatically decreased PCE values, clearly proving that the compound is an excellent electron extractor from the perovskite layer but a poor transporter as a bulk material. The improved passivation ability and electron extraction capabilities of the BPy-C 60 derivative were demonstrated by steady state and time-resolved photoluminescence (SS-and TRPL) as well as electrochemical impedance spectroscopy (EIS) and X-Ray photoelectron spectroscopy (XPS) measurements; likely attributed to the enhanced basicity of the pyridine groups that contributes to a stronger interaction with the interfacial Pb 2+ .more » « less
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By mimicking biomimetic synaptic processes, the success of artificial intelligence (AI) has been astounding with various applications such as driving automation, big data analysis, and natural-language processing.[1-4] Due to a large quantity of data transmission between the separated memory unit and the logic unit, the classical computing system with von Neumann architecture consumes excessive energy and has a significant processing delay.[5] Furthermore, the speed difference between the two units also causes extra delay, which is referred to as the memory wall.[6, 7] To keep pace with the rapid growth of AI applications, enhanced hardware systems that particularly feature an energy-efficient and high-speed hardware system need to be secured. The novel neuromorphic computing system, an in-memory architecture with low power consumption, has been suggested as an alternative to the conventional system. Memristors with analog-type resistive switching behavior are a promising candidate for implementing the neuromorphic computing system since the devices can modulate the conductance with cycles that act as synaptic weights to process input signals and store information.[8, 9]
The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO2, Ta2O5, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO2) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO2as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.
In this work, we proposed SiO2-based memristor and investigated switching behaviors metallized with different reduction potentials by applying pure Cu and Ag, and their alloys with varied ratios. Heavily doped p-type silicon was chosen as BE in order to exclude any effects of the BE ions on the memristor performance. We previously reported that the selection of TE is crucial for achieving a high memory window and stable switching performance. According to the study which compares the roles of Cu (switching stabilizer) and Ag (large switching window performer) TEs for oxide memristors, we have selected the TE materials and their alloys to engineer the SiO2-based memristor characteristics. The Ag TE leads to a larger memory window of the SiO2memristor, but the device shows relatively large variation and less reliability. On the other hand, the Cu TE device presents uniform gradual switching behavior which is in line with our previous report that Cu can be served as a stabilizer, but with small on/off ratio.[9] These distinct performances with Cu and Ag metallization leads us to utilize a Cu/Ag alloy as the TE. Various compositions of Cu/Ag were examined for the optimization of the memristor TEs. With a Cu/Ag alloying TE with optimized ratio, our SiO2based memristor demonstrates uniform switching behavior and memory window for analog switching applications. Also, it shows ideal potentiation and depression synaptic behavior under the positive/negative spikes (pulse train).
In conclusion, the SiO2memristors with different metallization were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of memristor, we integrated Cu, Ag and Cu/Ag alloy as TEs and compared the switch characteristics. Our encouraging results clearly demonstrate that SiO2with Cu/Ag is a promising memristor device with synaptic switching behavior in neuromorphic computing applications.
Acknowledgement This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.
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et al. ,Journal of Big Data, vol. 2, no. 1, p. 1, 2015.[4] Zhao
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SIGARCH Comput. Archit. News, vol. 23, no. 4, pp. 4–6, 1995.[8] Ielmini
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et al. , Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022. -
The traditional von Neumann architecture limits the increase in computing efficiency and results in massive power consumption in modern computers due to the separation of storage and processing units. The novel neuromorphic computation system, an in-memory computing architecture with low power consumption, is aimed to break the bottleneck and meet the needs of the next generation of artificial intelligence (AI) systems. Thus, it is urgent to find a memory technology to implement the neuromorphic computing nanosystem. Nowadays, the silicon-based flash memory dominates non-volatile memory market, however, it is facing challenging issues to achieve the requirements of future data storage device development due to the drawbacks, such as scaling issue, relatively slow operation speed, and high voltage for program/erase operations. The emerging resistive random-access memory (RRAM) has prompted extensive research as its simple two-terminal structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer. It can utilize a temporary and reversible dielectric breakdown to cause the RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). RRAM is expected to outperform conventional memory device with the advantages, notably its low-voltage operation, short programming time, great cyclic stability, and good scalability. Among the materials for RS layer, indium gallium zinc oxide (IGZO) has shown attractive prospects in abundance and high atomic diffusion property of oxygen atoms, transparency. Additionally, its electrical properties can be easily modulated by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, it has a great potential for fully integrated transparent electronics application. In this work, we proposed amorphous transparent IGZO-based RRAMs and investigated switching behaviors of the memory cells prepared with different top electrodes. First, ITO was choosing to serve as both TE and BE to achieve high transmittance. A multi-target magnetron sputtering system was employed to deposit all three layers (TE, RS, BE layers) on glass substrate. I-V characteristics were evaluated by a semiconductor parameter analyzer, and the bipolar RS feature of our RRAM devices was demonstrated by typical butterfly curves. The optical transmission analysis was carried out via a UV-Vis spectrometer and the average transmittance was around 80% out of entire devices in the visible-light wavelength range, implying high transparency. We adjusted the oxygen partial pressure during the sputtering of IGZO to optimize the property because the oxygen vacancy concentration governs the RS performance. Electrode selection is crucial and can impact the performance of the whole device. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation of the conductive filament (CF). A ~5 nm SiO 2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO 2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. Finally, an oxygen affinity metal Ti was selected as the TE for our third type of device because the concentration of the oxygen atoms can be shifted towards the Ti electrode, which provides an oxygengettering activity near the Ti metal. This process may in turn lead to the formation of a sub-stoichiometric region in the neighboring oxide that is believed to be the origin of better performance. In conclusion, the transparent amorphous IGZO-based RRAMs were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of RRAMs, we integrated a set of TE materials, and a barrier layer on IGZO-based RRAM and compared the switch characteristics. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and breaking the bottleneck of current memory technologies.more » « less
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Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.more » « less
