Glasses are nonequilibrium solids with properties highly dependent on their method of preparation. In vapor-deposited molecular glasses, structural organization could be readily tuned with deposition rate and substrate temperature. Here, we show that the atomic arrangement of strong network-forming GeO 2 glass is modified at medium range (<2 nm) through vapor deposition at elevated temperatures. Raman spectral signatures distinctively show that the population of six-membered GeO 4 rings increases at elevated substrate temperatures. Deposition near the glass transition temperature is more efficient than postgrowth annealing in modifying atomic structure at medium range. The enhanced medium-range organization correlates with reduction of the room temperature internal friction. Identifying the microscopic origin of room temperature internal friction in amorphous oxides is paramount to design the next-generation interference coatings for mirrors of the end test masses of gravitational wave interferometers, in which the room temperature internal friction is a main source of noise limiting their sensitivity.
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Cryogenic mechanical loss of amorphous germania and titania-doped germania thin films
- PAR ID:
- 10480850
- Publisher / Repository:
- Institute of Physics
- Date Published:
- Journal Name:
- Classical and Quantum Gravity
- Volume:
- 40
- Issue:
- 20
- ISSN:
- 0264-9381
- Page Range / eLocation ID:
- 205002
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Blistering is a phenomenon sometimes observed in sputtered-deposited thin films but seldom investigated in detail. Here, we consider the case of titania-doped germania (TGO)/silica multilayers deposited by ion beam sputtering. TGO is a candidate as high refractive index material in the Bragg mirrors for the next iteration of gravitational waves detectors. It needs to be annealed at 600∘C for 100 h in order to reach the desired relaxation state. However under some growth conditions, in 52-layer TGO/silica stacks, blistering occurs upon annealing at a temperature near 500∘C, which corresponds to the temperature where Ar desorbs from TGO. In order to better understand the blistering phenomenon, we measure the Ar transport in single layers of TGO and silica. In the case of
µ m-thick TGO layers, the Ar desorption is mainly limited by detrapping. The transport model also correctly predicts the evolution of the total amount of Ar in a 8.5µ m stack of TGO and silica layers annealed at 450∘C, but in that case, the process is mainly limited by diffusion. Since Ar diffusion is an order of magnitude slower in TGO compared to silica, we observe a correspondingly strong accumulation of Ar in TGO. The Ar transport model is used to explain some regimes of the blisters growth, and we find indications that Ar accumulation is a driver for their growth in general, but the blisters nucleation remains a complex phenomenon influenced by several other factors including stress, substrate roughness, and impurities. -
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The effects of annealing on the atomic structures of , , and are investigated using accelerated molecular dynamics (MD) simulations. Using population annealing with Boltzmann resampling to expedite the MD simulations, it is shown that annealed models demonstrate subtle but statistically significant changes in the structure. Consistent with experiments, the simulations show that effects of annealing on the atomic structures of these amorphous oxides are more pronounced in the medium‐range order than in the short‐range order.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6382/acf2dd
