High-throughput printing-based fabrication has emerged as a key enabler of flexible electronics given its unique capability for low-cost integration of circuits based on printed thin film transistors (TFTs). Research in printing inorganic metal oxides has revealed the potential for fabricating oxide TFTs with an unmatched combination of high electron mobility and optical transparency. Here, we highlight recent developments in ink chemistry, printing physics, and material design for high-mobility metal oxide transistors. We consider ongoing challenges for this field that include lowering process temperatures, achieving high speed and high resolution printing, and balancing device performance with the need for high mechanical flexibility. Finally, we provide a roadmap for overcoming these challenges with emerging synthetic strategies for fabricating 2D oxides and complementary TFT circuits for flexible electronics.
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All Electrohydrodynamic Printed Flexible Organic Thin Film Transistors
Abstract The demand of cost‐effective fabrication of printed flexible transistors has dramatically increased in recent years due to the need for flexible interface devices for various application including e‐skins, wearables, and medical patches. In this study, electrohydrodynamic (EHD) printing processes are developed to fabricate all the components of polymer‐based organic thin film transistors (OTFTs), including source/drain and gate electrodes, semiconductor channel, and gate dielectrics, which streamline the fabrication procedure for flexible OTFTs. The flexible transistors with top‐gate‐bottom‐contact configuration are fabricated by integrating organic semiconductor (i.e., poly(3‐hexylthiophene‐2,5‐diyl) blended with small molecule 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene), conductive polymer (i.e., poly (3,4‐ethylenedioxythiophene) polystyrene sulfonate), and ion‐gel dielectric. These functional inks are carefully designed with orthogonal solvents to enable their compatible printing into multilayered flexible OTFTs. The EHD printing process of each functional component is experimentally characterized and optimized. The fully EHD‐printed OTFTs show good electrical performance with mobility of 2.86 × 10−1cm2V−1s−1and on/off ratio of 104, and great mechanical flexibility with small mobility change at bending radius of 6 mm and stable transistor response under hundreds of bending cycles. The demonstrated all printing‐based fabrication process provides a cost‐effective route toward flexible electronics with OTFTs.
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- Award ID(s):
- 2134664
- PAR ID:
- 10481642
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Advanced Materials Technologies
- Volume:
- 8
- Issue:
- 17
- ISSN:
- 2365-709X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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