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1. Ferroelectric materials toward next-generation electromechanical technologies

   https://doi.org/10.1126/science.adn4926  

   Li, Fei; Wang, Bo; Gao, Xiangyu; Damjanovic, Dragan; Chen, Long-Qing; Zhang, Shujun (July 2025, Science)

   Ferroelectric materials have been widely used in various electromechanical devices, from ultrasonic transducers and actuators to mechanical energy harvesters. The key performance metrics of these devices, such as sensitivity, efficiency, and bandwidth of ultrasonic transducers, are largely determined by the piezoelectric properties. This Review highlights recent research progress in improving the piezoelectricity of ferroelectric materials and offers potential strategies for further enhancement to meet the ever-increasing demands for high-performance piezoelectric devices and systems. It provides insights into the future development of ferroelectrics to address the increasing demands of emerging applications, including photoacoustic imaging and piezoelectric fans and motors in integrated circuit–enabled electronic devices. Additionally, it emphasizes the need to consider environmental impacts across the entire life cycle of ferroelectrics, from sourcing and manufacturing to usage and disposal. 

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2. Phase Diagrams and Piezoelectric Properties of Wurtzite Al _1−x−y Sc _x Gd _y N Heterostructural Alloys

   https://doi.org/10.1002/advs.202520641  

   Martin, Julia L; Lee, Cheng‐Wei; Bernstein, Nate SP; Nguyen, Thi; Bryan, Ande; Cooper, Eli; Mangum, John S; Bauers, Sage R; Zakutayev, Andriy; Yazawa, Keisuke; et al (January 2026, Advanced Science)

   ABSTRACT Ternary nitride alloys based on wurtzite AlN are a promising platform to realize functional materials, particularly ferroelectrics and optical emitters, that can smoothly integrate with conventional microelectronics. Here, a strategic design is presented to enable multifunctional materials by substituting multiple elements into AlN to create quaternary nitride alloys. By combining computational predictions and combinatorial thin film synthesis, the phase diagram of these quaternary Al–Sc–Gd–N alloys (or pseudo‐ternary heterostructural AlN–ScN–GdN alloys) is successfully predicted as a function of effective temperature, and we experimentally grow thin films for the first time. It is revealed that crystallizes in a wurtzite‐derived structure for , consistent with the calculated phase diagram. The computational investigation explores whether co‐substitution induces cooperative effects on these alloys' piezoelectric and ferroelectric properties, finding that it is beneficial for reducing the polarization switching barrier. We calculate that thin films should display ferroelectric switching. This is supported by our experimental measurements of a high optical bandgap, enhanced piezoelectric coefficient, and a change in the calculated polarization switching mechanism, and we achieve preliminary ferroelectric switching that experimentally realizes the prediction. Overall, our work sets the foundation toward quaternary wurtzite‐nitride‐based multifunctional materials, including piezoelectrics, ferroelectrics, and possibly even multiferroics. 

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3. Recent progress on 2D ferroelectric and multiferroic materials, challenges, and opportunity

   https://doi.org/10.1007/s42247-021-00223-4  

   Behera, Banarji; Sutar, Bijuni Charan; Pradhan, Nihar Ranjan (July 2021, Emergent Materials)

   null (Ed.)

   Recently, the developments of two-dimensional (2D) ferroelectrics and multiferroics have attracted much more attention among researchers. These materials are useful for high-density devices for multifunctional applications such as sensors, transducers, actuators, non-volatile memories, photovoltaic, and FETs. Although several theoretical works have been reported on layered ferroelectrics, experimental work is still lacking in single to few-atomic layers of 2D ferroelectric materials. In this review, we have discussed the recent theoretical as well as experimental progress of 2D ferroelectric and multiferroic materials. The emphasis is given to the development of single to few-atomic layers of 2D ferroelectric materials. In this regard, the recent developments of 2D ferroelectric polarization on vanadium oxyhalides VOX2 (X=I, Br, Cl, and F), distorted phase d1-MoTe2, In2Se3, and SnSe are discussed. d1-MoTe2 shows Curie temperature (TC) above room temperature, while few-layered In2Se3 shows in-plane ferroelectricity and interesting domain wall dynamics in a single atomic layer of SnSe. This follows the discussion of multiferroic materials based on transition metal oxyiodide MOI2 (M=Ti, V, and Cr), double perovskite bilayer, and iron-doped In2Se3. While pristine In2Se3 shows ferroelectric properties, iron-doped In2Se3 shows multiferroicity. Finally, the potential applications of 2D ferroelectrics and multiferroics have been discussed that follow the challenges and opportunities in this field, which can guide the research community to develop next-generation 2D ferroelectric and multiferroic materials with interesting properties. 

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4. Spontaneous polarization in van der Waals materials: Two-dimensional ferroelectrics and device applications

   https://doi.org/10.1063/5.0116445  

   Lai, Keji (September 2022, Journal of Applied Physics)

   The research on two-dimensional (2D) van der Waals ferroelectrics has grown substantially in the last decade. These layered materials differ from conventional thin-film oxide ferroelectrics in that the surface and interface are free from dangling bonds. Some may also possess uncommon properties, such as bandgap tunability, mechanical flexibility, and high carrier mobility, which are desirable for applications in nanoelectronics and optoelectronics. This Tutorial starts by reviewing the theoretical tools in 2D ferroelectric studies, followed by discussing the material synthesis and sample characterization. Several prototypical electronic devices with innovative functionalities will be highlighted. Readers can use this article to obtain a basic understanding of the current status, challenges, and future prospects of 2D ferroelectric materials. 

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5. Magnetron-Sputtered Lead Titanate Thin Films for Pyroelectric Applications: Part 2—Electrical Characteristics and Characterization Methods

   https://doi.org/10.3390/ma17030589  

   Fathipour, Morteza; Xu, Yanan; Rana, Mukti (February 2024, Materials)

   Pyroelectric materials are naturally electrically polarized and exhibits a built-in spontaneous polarization in their unit cell structure even in the absence of any externally applied electric field. These materials are regarded as one of the ideal detector elements for infrared applications because they have a fast response time and uniform sensitivity at room temperature across all wavelengths. Crystals of the perovskite lead titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and MEMS devices. However, the preparation of large perfect and pure single crystals PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. In this part of the review paper, we explain the electrical behavior and characterization techniques commonly utilized to unravel the pyroelectric properties of lead titanate and its derivatives. Further, it explains how the material preparation techniques affect the electrical characteristics of resulting thin films. It also provides an in-depth discussion of the measurement of pyroelectric coefficients using different techniques. 

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