Rasetto, Marco, Wan, Qingzhou, Akolkar, Himanshu, Xiong, Feng, Shi, Bertram, and Benosman, Ryad. Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor. IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13.4 Web. doi:10.1109/JETCAS.2023.3330832.

Rasetto, Marco, Wan, Qingzhou, Akolkar, Himanshu, Xiong, Feng, Shi, Bertram, & Benosman, Ryad. Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 13 (4). https://doi.org/10.1109/JETCAS.2023.3330832

Rasetto, Marco, Wan, Qingzhou, Akolkar, Himanshu, Xiong, Feng, Shi, Bertram, and Benosman, Ryad. "Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor". IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13 (4). Country unknown/Code not available: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/JETCAS.2023.3330832. https://par.nsf.gov/biblio/10482780.

@article{osti_10482780,
place = {Country unknown/Code not available}, title = {Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor}, url = {https://par.nsf.gov/biblio/10482780}, DOI = {10.1109/JETCAS.2023.3330832}, abstractNote = {Not Available}, journal = {IEEE Journal on Emerging and Selected Topics in Circuits and Systems}, volume = {13}, number = {4}, publisher = {Institute of Electrical and Electronics Engineers}, author = {Rasetto, Marco and Wan, Qingzhou and Akolkar, Himanshu and Xiong, Feng and Shi, Bertram and Benosman, Ryad}, }