This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (
High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 106–108and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.
more » « less- NSF-PAR ID:
- 10484054
- Publisher / Repository:
- DOI PREFIX: 10.35848
- Date Published:
- Journal Name:
- Applied Physics Express
- Volume:
- 17
- Issue:
- 1
- ISSN:
- 1882-0778
- Format(s):
- Medium: X Size: Article No. 014005
- Size(s):
- Article No. 014005
- Sponsoring Org:
- National Science Foundation
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