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Title: Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ5 free exciton binding energy of 57 meV.  more » « less
Award ID(s):
2039380
NSF-PAR ID:
10488986
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
AIP Publishing
Date Published:
Journal Name:
APL Materials
Volume:
11
Issue:
8
ISSN:
2166-532X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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