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Extrinsic doping of Hg 2 GeTe 4 in the face of defect compensation and phase competition
Computation-guided selection of dopants enables the transformation of Hg2GeTe4from intrinsic to degenerate carrier concentrations and the thermoelectric performance is assessed experimentally.
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- Award ID(s):
- 1729594
- PAR ID:
- 10489179
- Publisher / Repository:
- RSC
- Date Published:
- Journal Name:
- Journal of Materials Chemistry C
- Volume:
- 11
- Issue:
- 26
- ISSN:
- 2050-7526
- Page Range / eLocation ID:
- 8838 to 8849
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/D3TC00209H
