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Title: A Process Tuning Analysis for the Three-Independent-Gate Field-Effect Transistor
Award ID(s):
1751064
PAR ID:
10489742
Author(s) / Creator(s):
; ;
Publisher / Repository:
IEEE
Date Published:
Journal Name:
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
ISBN:
979-8-3503-3546-0
Page Range / eLocation ID:
630 to 633
Format(s):
Medium: X
Location:
Paestum, Italy
Sponsoring Org:
National Science Foundation
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