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1. Preferentially oriented growth of diamond films on silicon with nickel interlayer

   https://doi.org/10.1007/s42452-022-05092-y  

   K.C., Anupam ; Siddique, Anwar ; Anderson, Jonathan ; Saha, Rony ; Gautam, Chhabindra ; Ayala, Anival ; Engdahl, Chris ; Holtz, Mark W. ; Piner, Edwin L. ( July 2022 , SN Applied Sciences)

   A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealing studies demonstrate diffusion of Ni into Si to form nickel silicides with crystal structure depending on temperature. The HFCVD diamond film with Ni interlayer results in reduced non-diamond carbon, low surface roughness, high diamond crystal quality, and increased texturing relative to growth on bare silicon wafers. X-ray diffraction results show that the diamond film grown with 10 nm Ni interlayer yielded 92.5% of the diamond grains oriented along the (110) crystal planes with ~ 2.5 µm thickness and large average grain size ~ 1.45 µm based on scanning electron microscopy. Texture is also observed to develop for ~ 300 nm thick diamond films with ~ 89.0% of the grains oriented along the (110) crystal plane direction. These results are significantly better than diamond grown on Si (111) without Ni layer with the same HFCVD conditions. The oriented growth of diamond film on Ni interlayers is explained by a proposed model wherein the nano-diamond seeds becoming oriented relative to the β₁-Ni₃Si that forms during the diamond nucleation period. The model also explains the silicidation and diamond growth processes.

   High quality diamond film with minimum surface roughness and ~93% oriented grains along (110) crystallographic direction is grown on Si substrate using a thin 5 to 20 nm nickel layer.

   A detailed report on the formation of different phases of nickel silicide, its stability with different temperature, and its role for diamond film texturing at HFCVD growth condition is presented.

   A diamond growth model on Si substrate with Ni interlayer to grow high quality-oriented diamond film is established.

    

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2. Oxygen Reduction Electrocatalysis with Epitaxially Grown Spinel MnFe 2 O 4 and Fe 3 O 4

   https://doi.org/10.1021/acscatal.1c05172  

   Bredar, Alexandria R. ; Blanchet, Miles D. ; Burton, Andricus R. ; Matthews, Bethany E. ; Spurgeon, Steven R. ; Comes, Ryan B. ; Farnum, Byron H. ( March 2022 , ACS Catalysis)

   Nanocrystalline MnFe2O4 has shown promise as a catalyst for the oxygen reduction reaction (ORR) in alkaline solutions, but the material has been sparingly studied as highly ordered thin-film catalysts. To examine the role of surface termination and Mn and Fe site occupancy, epitaxial MnFe2O4 and Fe3O4 spinel oxide films were grown on (001)- and (111)-oriented Nb:SrTiO3 perovskite substrates using molecular beam epitaxy and studied as electrocatalysts for the oxygen reduction reaction (ORR). High-resolution X-ray diffraction (HRXRD) and X-ray photoelectron spectroscopy (XPS) show the synthesis of pure phase materials, while scanning transmission electron microscopy (STEM) and reflection high-energy electron diffraction (RHEED) analysis demonstrate island-like growth of (111) surface-terminated pyramids on both (001)- and (111)-oriented substrates, consistent with the literature and attributed to the lattice mismatch between the spinel films and the perovskite substrate. Cyclic voltammograms under a N2 atmosphere revealed distinct redox features for Mn and Fe surface termination based on comparison of MnFe2O4 and Fe3O4. Under an O2 atmosphere, electrocatalytic reduction of oxygen was observed at both Mn and Fe redox features; however, a diffusion-limited current was only achieved at potentials consistent with Fe reduction. This result contrasts with that of nanocrystalline MnFe2O4 reported in the literature where the diffusion-limited current is achieved with Mn-based catalysis. This difference is attributed to a low density of Mn surface termination, as determined by the integration of current from CVs collected under N2, in addition to low conductivity through the MnFe2O4 film due to the degree of inversion. Such low densities are attributed to the synthetic method and island-like growth pattern and highlight challenges in studying ORR catalysis with single-crystal spinel materials. 

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3. Atomic layer epitaxy of kagome magnet Fe 3 Sn 2 and Sn-modulated heterostructures

   https://doi.org/10.1063/5.0094257  

   Cheng, Shuyu ; Wang, Binbin ; Lyalin, Igor ; Bagués, Núria ; Bishop, Alexander J. ; McComb, David W. ; Kawakami, Roland K. ( June 2022 , APL Materials)

   Magnetic materials with kagome crystal structure exhibit rich physics, such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here, we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe 3 Sn 2 . The structural and magnetic characterization of Fe 3 Sn 2 on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies on the local magnetic structure by anomalous Nernst effect imaging reveal in-plane oriented micrometer size domains. Superlattice structures consisting of Fe 3 Sn 2 and Fe 3 Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe 3 Sn 2 with other materials. 

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4. Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy

   https://doi.org/10.1063/5.0173637  

   Mondal, Shubham ; Wang, Ding ; Anhar Uddin Bhuiyan, A F ; Hu, Mingtao ; Reddeppa, Maddaka ; Wang, Ping ; Zhao, Hongping ; Mi, Zetian ( October 2023 , Applied Physics Letters)

   N-polar AlGaN is an emerging wide-bandgap semiconductor for next-generation high electron mobility transistors and ultraviolet light emitting diodes and lasers. Here, we demonstrate the growth and characterization of high-quality N-polar AlGaN films on C-face 4H-silicon carbide (SiC) substrates by molecular beam epitaxy. On optimization of the growth conditions, N-polar AlGaN films exhibit a crack free, atomically smooth surface (rms roughness ∼ 0.9 nm), and high crystal quality with low density of defects and dislocations. The N-polar crystallographic orientation of the epitaxially grown AlGaN film is unambiguously confirmed by wet chemical etching. We demonstrate precise compositional tunability of the N-polar AlGaN films over a wide range of Al content and a high internal quantum efficiency ∼74% for the 65% Al content AlGaN film at room temperature. Furthermore, controllable silicon (Si) doping in high Al content (65%) N-polar AlGaN films has been demonstrated with the highest mobility value ∼65 cm2/V-s observed corresponding to an electron concentration of 1.1 × 1017 cm−3, whereas a relatively high mobility value of 18 cm2/V-s is sustained for an electron concentration of 3.2 × 1019 cm−3, with an exceptionally low resistivity value of 0.009 Ω·cm. The polarity-controlled epitaxy of AlGaN on SiC presents a viable approach for achieving high-quality N-polar III-nitride semiconductors that can be harnessed for a wide range of emerging electronic and optoelectronic device applications.

    

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5. Surface stability of SrNbO3+δ grown by hybrid molecular beam epitaxy

   https://doi.org/10.1063/5.0097699  

   Thapa, Suresh ; Provence, Sydney R. ; Gemperline, Patrick T. ; Matthews, Bethany E. ; Spurgeon, Steven R. ; Battles, Sydney L. ; Heald, Steve M. ; Kuroda, Marcelo A. ; Comes, Ryan B. ( September 2022 , APL Materials)

   4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO3 is one such candidate material, serving as a good donor material in interfacial oxide systems and exhibiting high electron mobility in ultrathin films. However, its synthesis is challenging due to the metastable nature of the d1 Nb4+ cation and the limitations in the delivery of refractory Nb. To date, films have been grown primarily by pulsed laser deposition (PLD), but development of a means to grow and stabilize the material via molecular beam epitaxy (MBE) would enable studies of interfacial phenomena and multilayer structures that may be challenging by PLD. To that end, SrNbO3 thin films were grown using hybrid MBE for the first time using a tris(diethylamido)(tert-butylimido) niobium precursor for Nb and an elemental Sr source on GdScO3 substrates. Varying thicknesses of insulating SrHfO3 capping layers were deposited using a hafnium tert-butoxide precursor for Hf on top of SrNbO3 films to preserve the metastable surface. Grown films were transferred in vacuo for x-ray photoelectron spectroscopy to quantify elemental composition, density of states at the Fermi energy, and Nb oxidation state. Ex situ studies by x-ray absorption near edge spectroscopy and scanning transmission electron microscopy illustrate that the SrHfO3 capping plays an important role in preserving the crystalline quality of the material and the Nb 4d1 metastable charge state under atmospheric conditions.

    

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