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This content will become publicly available on March 6, 2025

Title: Unexpected plastic strain-induced phase transformation phenomena in silicon
Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied. However, strain-induced PTs in Si were never studied in situ. Here, we revealed in situ various important plastic strain-induced PT phenomena. A correlation between the particle size's direct and inverse Hall-Petch effect on yield strength and pressure for strain-induced PT is found. For 100 nm particles, strain-induced PT Si-I³Si-II initiates at 0.3 GPa versus 16.2 GPa under hydrostatic conditions; Si-I³Si-III PT starts at 0.6 GPa and does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions is ~5-7 GPa higher than in Si-I. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II³Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction.  more » « less
Award ID(s):
2246991 1943710
NSF-PAR ID:
10495199
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
https://doi.org/10.21203/rs.3.rs-4014429/v1
Date Published:
Journal Name:
Research square
ISSN:
2693-5015
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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