Xie, Ti, Liang, Shanchuan, Deitemyer, Samuel, Wang, Qinqin, Zhou, Tong, Žutić, Igor, Zhang, Xixiang, Yuan, Dongsheng, Zhang, Xiang, and Gong, Cheng. Compositional engineering of magnetic anisotropy in Cr2Si Ge2-Te6. Retrieved from https://par.nsf.gov/biblio/10496843. Materials Today Electronics 7.C Web. doi:10.1016/j.mtelec.2023.100081.

Xie, Ti, Liang, Shanchuan, Deitemyer, Samuel, Wang, Qinqin, Zhou, Tong, Žutić, Igor, Zhang, Xixiang, Yuan, Dongsheng, Zhang, Xiang, & Gong, Cheng. Compositional engineering of magnetic anisotropy in Cr2Si Ge2-Te6. Materials Today Electronics, 7 (C). Retrieved from https://par.nsf.gov/biblio/10496843. https://doi.org/10.1016/j.mtelec.2023.100081

Xie, Ti, Liang, Shanchuan, Deitemyer, Samuel, Wang, Qinqin, Zhou, Tong, Žutić, Igor, Zhang, Xixiang, Yuan, Dongsheng, Zhang, Xiang, and Gong, Cheng. "Compositional engineering of magnetic anisotropy in Cr2Si Ge2-Te6". Materials Today Electronics 7 (C). Country unknown/Code not available: Elsevier. https://doi.org/10.1016/j.mtelec.2023.100081. https://par.nsf.gov/biblio/10496843.

@article{osti_10496843,
place = {Country unknown/Code not available}, title = {Compositional engineering of magnetic anisotropy in Cr2Si Ge2-Te6}, url = {https://par.nsf.gov/biblio/10496843}, DOI = {10.1016/j.mtelec.2023.100081}, abstractNote = {}, journal = {Materials Today Electronics}, volume = {7}, number = {C}, publisher = {Elsevier}, author = {Xie, Ti and Liang, Shanchuan and Deitemyer, Samuel and Wang, Qinqin and Zhou, Tong and Žutić, Igor and Zhang, Xixiang and Yuan, Dongsheng and Zhang, Xiang and Gong, Cheng}, }