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Title: Polarization-Graded HEMTs for Improved Johnson’s Figure of Merit
Award ID(s):
2303897
PAR ID:
10498177
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
The 14th International Conference on Nitride Semiconductors (ICNS-14)
Date Published:
Journal Name:
The 14th International Conference on Nitride Semiconductors (ICNS-14)
Format(s):
Medium: X
Location:
Fukuoka, Japan
Sponsoring Org:
National Science Foundation
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