skip to main content

Attention:

The NSF Public Access Repository (PAR) system and access will be unavailable from 11:00 PM ET on Thursday, January 16 until 2:00 AM ET on Friday, January 17 due to maintenance. We apologize for the inconvenience.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Polarization-Graded HEMTs for Improved Johnson’s Figure of Merit
Award ID(s):
2303897
PAR ID:
10498177
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
The 14th International Conference on Nitride Semiconductors (ICNS-14)
Date Published:
Journal Name:
The 14th International Conference on Nitride Semiconductors (ICNS-14)
Format(s):
Medium: X
Location:
Fukuoka, Japan
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email