Advances in Millimetre-Wave III-N Transistor Performance Through Polarization-Graded Heterostructures

Fay, P.

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Citation Details

Advances in Millimetre-Wave III-N Transistor Performance Through Polarization-Graded Heterostructures

Award ID(s):: 2303897

PAR ID:: 10498188

Author(s) / Creator(s):: Fay, P.

Publisher / Repository:: IEEE Xplore

Date Published:: 2024-03-05

Journal Name:: IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

Format(s):: Medium: X

Location:: Bangalore, IN

Sponsoring Org:: National Science Foundation

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