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1. Role of Lithium Doping in P2-Na 0.67 Ni 0.33 Mn 0.67 O 2 for Sodium-Ion Batteries

   https://doi.org/10.1021/acs.chemmater.1c00569  

   Xie, Yingying ; Gabriel, Eric ; Fan, Longlong ; Hwang, Inhui ; Li, Xiang ; Zhu, Haoyu ; Ren, Yang ; Sun, Chengjun ; Pipkin, Julie ; Dustin, Malia ; et al ( June 2021 , Chemistry of Materials)
2. Structural Evolution and Atom Clustering in β-SiAlON: β-Si 6–z Al z O z N 8–z

   https://doi.org/10.1021/acs.inorgchem.6b02780  

   Cozzan, Clayton ; Griffith, Kent J. ; Laurita, Geneva ; Hu, Jerry G. ; Grey, Clare P. ; Seshadri, Ram ( February 2017 , Inorganic Chemistry)
3. Studies of Functional Defects for Fast Na‐Ion Conduction in Na 3− y PS 4− x Cl x with a Combined Experimental and Computational Approach

   https://doi.org/10.1002/adfm.201807951  

   Feng, Xuyong ; Chien, Po‐Hsiu ; Zhu, Zhuoying ; Chu, Iek‐Heng ; Wang, Pengbo ; Immediato‐Scuotto, Marcello ; Arabzadeh, Hesam ; Ong, Shyue Ping ; Hu, Yan‐Yan ( January 2019 , Advanced Functional Materials)

   All‐solid‐state rechargeable sodium (Na)‐ion batteries are promising for inexpensive and high‐energy‐density large‐scale energy storage. In this contribution, new Na solid electrolytes, Na_3−yPS_4−xCl_x, are synthesized with a strategic approach, which allows maximum substitution of Cl for S (x= 0.2) without significant compromise of structural integrity or Na deficiency. A maximum conductivity of 1.96 mS cm⁻¹at 25 °C is achieved for Na_3.0PS_3.8Cl_0.2, which is two orders of magnitude higher compared with that of tetragonal Na₃PS₄(t‐Na₃PS₄). The activation energy (E_a) is determined to be 0.19 eV. Ab initio molecular dynamics simulations shed light on the merit of maximizing Cl‐doping while maintaining low Na deficiency in enhanced Na‐ion conduction. Solid‐state nuclear magnetic resonance (NMR) characterizations confirm the successful substitution of Cl for S and the resulting change of P oxidation state from 5+ to 4+, which is also verified by spin moment analysis. Ion transport pathways are determined with a tracer‐exchange NMR method. The functional detects that promote Na ‐ion transport are maximized for further improvement in ionic conductivity. Full‐cell performance is demonstrated using Na/Na_3.0PS_3.8Cl_0.2/Na₃V₂(PO₄)₃with a reversible capacity of ≈100 mAh g^‐1at room temperature.

    

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4. Interpretation of the Na + Ionic Conductivity in Na 4 P 2 S 7–x O x Mixed Oxy-Sulfide Glasses: Effects of Oxygen Doping

   https://doi.org/10.1021/acs.chemmater.2c01934  

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5. Strain- and thickness-dependent magnetic properties of epitaxial La 0.67 Sr 0.33 CoO 3 /La 0.67 Sr 0.33 MnO 3 bilayers

   https://doi.org/10.1063/5.0122009  

   Feng, Mingzhen ; Ahlm, Nolan J. ; Kane, Alexander M. ; Chiu, I-Ting ; Sasaki, Dayne Y. ; Shafer, Padraic ; N'Diaye, Alpha T. ; Mehta, Apurva ; Takamura, Yayoi ( November 2022 , Journal of Applied Physics)

   Magnetic properties and interfacial phenomena of epitaxial perovskite oxides depend sensitively on parameters such as film thickness and strain state. In this work, epitaxial La 0.67 Sr 0.33 CoO 3 (LSCO)/La 0.67 Sr 0.33 MnO 3 (LSMO) bilayers were grown on NdGaO 3 (NGO) and LaAlO 3 (LAO) substrates with a fixed LSMO thickness of 6 nm, and LSCO thickness (t LSCO ) varying from 2 to 10 nm. Soft x-ray magnetic spectroscopy revealed that magnetically active Co 2+ ions that strongly coupled to the LSMO layer were observed below a critical t LSCO for bilayers grown on both substrates. On LAO substrates, this critical thickness was 2 nm, above which the formation of Co 2+ ions was quickly suppressed leaving only a soft LSCO layer with mixed valence Co 3+ /Co 4+ ions. The magnetic properties of both LSCO and LSMO layers displayed strong t LSCO dependence. This critical t LSCO increased to 4 nm on NGO substrates, and the magnetic properties of only the LSCO layer displayed t LSCO dependence. A non-magnetic layer characterized by Co 3+ ions and with a thickness below 2 nm exists at the LSCO/substrate interface for both substrates. The results contribute to the understanding of interfacial exchange spring behavior needed for applications in next generation spintronic and magnetic memory devices. 

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