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Title: Examining the ferroelectric characteristics of aluminum nitride‐based thin films
Abstract The discovery of ferroelectricity in AlN‐based thin films, including Al1‐xScxN and Al1‐xBxN, over the past few years has spurred great research interests worldwide. In this review, we carefully examined the latest developments for these ferroelectric films with respect to alloy composition, temperature, film thickness, deposition condition, and fatigue endurance by electric field cycling. Looking ahead, there is an urgent need to resolve the challenge of large current leakage faced by these films, which necessitates a combined efforts from both simulations and experiments to identify the root cause and eventually come up with engineering strategies to suppress such leakage. In addition, overcoming the thickness scaling challenge to push ferroelectric thin film down to a few nanometers for better device miniaturization will also be of great interest. Considering the somewhat unexpected discovery of AlN‐based thin films with potential ferroelectric application, we believe that it will be also rewarding to further explore other III‐V‐based semiconductor materials.  more » « less
Award ID(s):
2015557
PAR ID:
10509688
Author(s) / Creator(s):
; ;
Publisher / Repository:
Wiley
Date Published:
Journal Name:
Journal of the American Ceramic Society
Volume:
107
Issue:
3
ISSN:
0002-7820
Page Range / eLocation ID:
1571 to 1581
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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