Cohen, Asaf, Li, Junying, Cohen, Hagai, Kaplan-Ashiri, Ifat, Khodorov, Sergey, Wachtel, Ellen J, Lubomirsky, Igor, Frenkel, Anatoly I, and Ehre, David. Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films. Retrieved from https://par.nsf.gov/biblio/10511415. ACS Applied Electronic Materials . Web. doi:10.1021/acsaelm.3c01390.

Cohen, Asaf, Li, Junying, Cohen, Hagai, Kaplan-Ashiri, Ifat, Khodorov, Sergey, Wachtel, Ellen J, Lubomirsky, Igor, Frenkel, Anatoly I, & Ehre, David. Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films. ACS Applied Electronic Materials, (). Retrieved from https://par.nsf.gov/biblio/10511415. https://doi.org/10.1021/acsaelm.3c01390

Cohen, Asaf, Li, Junying, Cohen, Hagai, Kaplan-Ashiri, Ifat, Khodorov, Sergey, Wachtel, Ellen J, Lubomirsky, Igor, Frenkel, Anatoly I, and Ehre, David. "Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films". ACS Applied Electronic Materials (). Country unknown/Code not available: ACS. https://doi.org/10.1021/acsaelm.3c01390. https://par.nsf.gov/biblio/10511415.

@article{osti_10511415,
place = {Country unknown/Code not available}, title = {Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films}, url = {https://par.nsf.gov/biblio/10511415}, DOI = {10.1021/acsaelm.3c01390}, abstractNote = {N/A}, journal = {ACS Applied Electronic Materials}, publisher = {ACS}, author = {Cohen, Asaf and Li, Junying and Cohen, Hagai and Kaplan-Ashiri, Ifat and Khodorov, Sergey and Wachtel, Ellen J and Lubomirsky, Igor and Frenkel, Anatoly I and Ehre, David}, editor = {NA} }