More Like this

1. Unexplored MBE growth mode reveals new properties of superconducting NbN

   https://doi.org/10.1103/PhysRevMaterials.5.024802  

   Wright, John; Chang, Celesta; Waters, Dacen; Lüpke, Felix; Feenstra, Randall; Raymond, Lucy; Koscica, Rosalyn; Khalsa, Guru; Muller, David; Xing, Huili G.; et al (February 2021, Physical Review Materials)

   null (Ed.)
2. Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN

   https://doi.org/10.1063/1.5131664  

   Cheng, Risheng; Wang, Sihao; Tang, Hong X. (December 2019, Applied Physics Letters)
3. Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping

   Yunyan Yao, Qi Song (August 2018, Physical review. B, Condensed matter)

   The emerging field of superconductor (SC) spintronics has attracted intensive attentions recently. Many fantastic spin dependent properties in SC have been discovered, including the observation of large magnetoresistance, long spin lifetimes and the giant spin Hall effect in SC, as well as spin supercurrent in Josephson junctions, etc. Regarding the spin dynamic in SC films, few studies has been reported yet. Here, we report the investigation of the spin dynamics in an s-wave superconducting NbN film via spin pumping from an adjacent insulating ferromagnet GdN layer. A profound coherence peak of the Gilbert damping is observed slightly below the superconducting critical temperature of the NbN layer, which is consistent with recent theoretical studies. Our results further indicate that spin pumping could be a powerful tool for investigating the spin dynamics in 2D crystalline superconductors. 

   more » « less
4. Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy

   https://doi.org/10.1063/5.0083184  

   Wright, John G.; Chang, Celesta S.; Muller, David A.; Xing, Huili G.; Jena, Debdeep (May 2022, APL Materials)

   We report the structural and electronic properties of NbN/GaN junctions grown by plasma-assisted molecular beam epitaxy. High crystal-quality NbN films grown on GaN exhibit superconducting critical temperatures in excess of 10 K for thicknesses as low as 3 nm. We observe that the NbN lattice adopts the stacking sequence of the underlying GaN and that domain boundaries in the NbN thereby occur at the site of atomic steps in the GaN surface. The electronic properties of the NbN/GaN junction are characterized using Schottky barrier diodes. Current–voltage–temperature and capacitance–voltage measurements are used to determine the Schottky barrier height of the NbN/GaN junction, which we conclude is ∼1.3 eV. 

   more » « less
5. Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature

   https://doi.org/10.1080/21663831.2021.1919934  

   Wei, Xiucheng; Roy, Pinku; Yang, Zihao; Zhang, Di; He, Zihao; Lu, Ping; Licata, Olivia; Wang, Haiyan; Mazumder, Baishakhi; Patibandla, Nag; et al (August 2021, Materials Research Letters)

   null (Ed.)