Jönsson, Adam, Xu, Pengcheng, Reitemeier, Julius, Bohn, Paul W, and Fay, Patrick. Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes. Retrieved from https://par.nsf.gov/biblio/10515535. Materials Science in Semiconductor Processing 171.C Web. doi:10.1016/j.mssp.2023.108036.

Jönsson, Adam, Xu, Pengcheng, Reitemeier, Julius, Bohn, Paul W, & Fay, Patrick. Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes. Materials Science in Semiconductor Processing, 171 (C). Retrieved from https://par.nsf.gov/biblio/10515535. https://doi.org/10.1016/j.mssp.2023.108036

Jönsson, Adam, Xu, Pengcheng, Reitemeier, Julius, Bohn, Paul W, and Fay, Patrick. "Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes". Materials Science in Semiconductor Processing 171 (C). Country unknown/Code not available: NSF-PAR. https://doi.org/10.1016/j.mssp.2023.108036. https://par.nsf.gov/biblio/10515535.

@article{osti_10515535,
place = {Country unknown/Code not available}, title = {Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes}, url = {https://par.nsf.gov/biblio/10515535}, DOI = {10.1016/j.mssp.2023.108036}, abstractNote = {}, journal = {Materials Science in Semiconductor Processing}, volume = {171}, number = {C}, publisher = {NSF-PAR}, author = {Jönsson, Adam and Xu, Pengcheng and Reitemeier, Julius and Bohn, Paul W and Fay, Patrick}, }