How strong correlations and topology interplay is a topic of great current interest. In this perspective paper, we focus on correlation-driven gapless phases. We take the time-reversal symmetric Weyl semimetal as an example because it is expected to have clear (albeit nonquantized) topological signatures in the Hall response and because the first strongly correlated representative, the noncentrosymmetric Weyl–Kondo semimetal Ce3Bi4Pd3, has recently been discovered. We summarize its key characteristics and use them to construct a prototype Weyl–Kondo semimetal temperature-magnetic field phase diagram. This allows for a substantiated assessment of other Weyl–Kondo semimetal candidate materials. We also put forward scaling plots of the intrinsic Berry-curvature-induced Hall response vs the inverse Weyl velocity—a measure of correlation strength, and vs the inverse charge carrier concentration—a measure of the proximity of Weyl nodes to the Fermi level. They suggest that the topological Hall response is maximized by strong correlations and small carrier concentrations. We hope that our work will guide the search for new Weyl–Kondo semimetals and correlated topological semimetals in general, and also trigger new theoretical work.
This content will become publicly available on June 1, 2025
The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.
more » « less- PAR ID:
- 10519354
- Publisher / Repository:
- AIP Publishing
- Date Published:
- Journal Name:
- Applied Physics Reviews
- Volume:
- 11
- Issue:
- 2
- ISSN:
- 1931-9401
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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