Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf-B-Si-Y/Ho-C-N films up to 1500 °C
- Award ID(s):
- 2122128
- PAR ID:
- 10520789
- Publisher / Repository:
- Elsevier
- Date Published:
- Journal Name:
- Materials & Design
- Volume:
- 237
- Issue:
- C
- ISSN:
- 0264-1275
- Page Range / eLocation ID:
- 112589
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation