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Title: Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices
Award ID(s):
2200397
PAR ID:
10521726
Author(s) / Creator(s):
; ;
Publisher / Repository:
Springer Nature
Date Published:
Journal Name:
Journal of Materials Science: Materials in Electronics
Volume:
35
Issue:
19
ISSN:
0957-4522
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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