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Title: Progress towards the competitive multiferroic molecular transistor *
The example of spin crossover molecule [Fe(Htrz)2(trz)](BF4) (where Htrz = 1H-1,2,4-triazole) plus polyaniline composite thin films is used to illustrate the rapid improvement in transport properties signaling that competitive molecular devices for back end of the line (BEOL) silicon compatible nonvolatile memory arrays are increasing realistic.  more » « less
Award ID(s):
2003057
PAR ID:
10521759
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
IEEE
Date Published:
ISBN:
979-8-3503-3546-0
Page Range / eLocation ID:
626 to 627
Format(s):
Medium: X
Location:
Paestum, Italy
Sponsoring Org:
National Science Foundation
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