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We present planar aluminum superconductor–graphene junctions whose hybrid interface is engineered for couplings ranging from tunneling to the strongly coupled regime by employing an atomically thin van der Waals tunneling barrier. Without the vdW barrier, we find Al makes strongly coupled contacts with the fully proximities graphene channel underneath. Using a large band gap hexagonal boron nitride (hBN) barrier, we find the junctions always remain in the weak coupling regime, exhibiting tunneling characteristics. Using monolayer semi-conducting transition metal dichalcogenides (TMDs) such as MoS2, we realize intermediate coupling with enhanced junction conductance due to the Andreev process. In this intermediate regime, we find that junction resistance changes in discrete steps when sweeping a perpendicular magnetic field. The period of the resistance steps in the magnetic field is inversely proportional to the junction area, suggesting the physical origin of our observations is due to magnetic-field-induced vortex formation in the planar junction.
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Landau level transition and magnetophonon resonance in a twisted bilayer graphene
We perform resonant Raman spectroscopy on 8◦ twisted bilayer graphene placed in an out-of-plane magnetic field. The high-quality device has narrow Landau level linewidth of less than 5 meV that enables detection of features from both electronic Raman scattering and magnetophonon resonance involving electronic transitions between the low energy Landau levels. Two magnetophonon resonances are observed, one at 4.6T in the strong coupling regime, and the other at 2.6T in the weak coupling regime. Using the measured Landau level transition energy, we analyze the renormalization of effective band velocity, whose dependence on magnetic field points to a 20% enhancement of dielectric constant due to the presence of an adjacent graphene layer, a quite prominent screening effect from a monolayer of carbon atoms in proximity. Both the Landau level transition electronic Raman and the magnetophonon resonance are gate tunable. Harnessing angular momentum conservation, we demonstrate charge tuning of electron phonon coupling strength for left and right circularly polarized G band phonons separately.
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- Award ID(s):
- 2004474
- PAR ID:
- 10525143
- Publisher / Repository:
- elsevier
- Date Published:
- Journal Name:
- Solid State Communications
- Volume:
- 371
- Issue:
- C
- ISSN:
- 0038-1098
- Page Range / eLocation ID:
- 115265
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1016/j.ssc.2023.115265
