We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of 104. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion.
more » « less- PAR ID:
- 10531228
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 30
- Issue:
- 5
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 6921
- Size(s):
- Article No. 6921
- Sponsoring Org:
- National Science Foundation
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