This content will become publicly available on July 22, 2025
Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric
- Award ID(s):
- 2302696
- NSF-PAR ID:
- 10531646
- Publisher / Repository:
- AIP Publishing
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 125
- Issue:
- 4
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found