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This content will become publicly available on July 22, 2025

Title: Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric
Award ID(s):
2302696
NSF-PAR ID:
10531646
Author(s) / Creator(s):
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Publisher / Repository:
AIP Publishing
Date Published:
Journal Name:
Applied Physics Letters
Volume:
125
Issue:
4
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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