skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Processing of diamond films with azimuthal texture on silicon wafer for quantum systems
Diamond is a wide bandgap semiconductor possessing unique properties for applications in quantum systems and ultra-wide bandgap electronics, which require a fundamental understanding of processing of high-quality diamond crystals and textured films by microwave plasma-enhanced chemical vapor deposition (MPECVD). The approach of bias-enhanced nucleation (BEN) followed by growth is studied for the processing of oriented diamond film with azimuthal texture. The magnitude of the applied electric field is shown to play an important role in the processing of the highly azimuthally textured diamond film on Si (100) substrate. The X-ray diffraction pole figure, scanning electron microscopy, and Raman spectroscopy results show that an optimum applied electric field during BEN and microwave plasma conditions leads to the formation of diamond film with azimuthal texture upon growth by MPECVD. These results are promising for fabricating diamond films of optimum characteristics containing nitrogen-vacancy (NV) defect centers for application in quantum devices.  more » « less
Award ID(s):
2126275 2103058
PAR ID:
10533969
Author(s) / Creator(s):
;
Editor(s):
Ramamoorthy, Ramesh
Publisher / Repository:
Materials Research Society, 2024
Date Published:
Journal Name:
Journal of Materials Research
Edition / Version:
3
Volume:
39
Issue:
5
ISSN:
0884-2914
Page Range / eLocation ID:
825 to 835
Subject(s) / Keyword(s):
Diamond, Processing, Texture, Quantum Applications
Format(s):
Medium: X Size: 4.1MB Other: pdf
Size(s):
4.1MB
Sponsoring Org:
National Science Foundation
More Like this
  1. Nucleation is important in processing of good quality diamond crystals and textured thin films by microwave plasma enhanced chemical vapor deposition (MPECVD) for applications in quantum devices and systems. Bias-enhanced nucleation (BEN) is one approach for diamond nucleation in situ during MPECVD. However, the mechanism of diamond nucleation by BEN is not well understood. This paper describes results on the nucleation of diamond within a carbon film upon application of electric field during the BEN-facilitated MPECVD process. The nature of the diamond film and nuclei formed is characterized by SEM (scanning electron microscopy), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The HRTEM images and associated diffraction patterns of the nucleation layer show that the diamond nuclei are formed within the carbon film close to the Si (100) substrate surface under the influence of microwaves and electric fields that lead to formation of the textured diamond film and crystal upon further growth. These results are expected to develop diamond films of optimum quality containing a nitrogen-vacancy center for application in quantum systems. 
    more » « less
  2. null (Ed.)
    Incorporating nanoparticles into devices for a wide range of applications often requires the formation of thick films, which is particularly necessary for improving magnetic power storage, microwave properties, and sensor performance. One approach to assembling nanoparticles into films is the use of electrophoretic deposition (EPD). This work seeks to develop methods to increase film thickness and stability in EPD by increasing film-substrate interactions via functionalizing conductive substrates with various chelating agents. Here, we deposited iron oxide nanoparticles onto conductive substrates functionalized with three chelating agents with different functional moieties and differing chelating strengths. We show that increasing chelating strength can increase film-substrate interactions, resulting in thicker films when compared to traditional EPD. Results will also be presented on how the chelating strength relates to film formation as a function of deposition conditions. Yield for EPD is influenced by deposition conditions including applied electric field, particle concentration, and deposition time. This work shows that the functionalization of substrates with chelating agents that coordinate strongly with nanoparticles (phosphonic acid and dopamine) overcome parameters that traditionally hinder the deposition of thicker and more stable films, such as applied electric field and high particle concentration. We show that functionalizing substrates with chelating agents is a promising method to fabricate thick, stable films of nanoparticles deposited via EPD over a larger processing space by increasing film-substrate interactions. 
    more » « less
  3. There is a growing need for digital and power electronics to deliver higher power for applications in batteries for electric vehicles, energy sources from wind and solar, data centers, and microwave devices. The higher power also generates more heat, which requires better thermal management. Diamond thin films and substrates are attractive for thermal management applications in power electronics because of their high thermal conductivity. However, deposition of diamond by microwave plasma enhanced chemical vapor deposition (MPECVD) requires high temperatures, which can degrade metallization used in power electronic devices. In this research, titanium (Ti)–aluminum (Al) thin films were deposited by DC magnetron sputtering on p-type Si (100) substrates using a physical mask for creating dot patterns for measuring the properties of the contact metallization. The influence of processing conditions and postdeposition annealing in argon (Ar) and hydrogen (H2) at 380 °C for 1 h on the properties of the contact metallization is studied by measuring the I-V characteristics and Hall effect. The results indicated a nonlinear response for the as-deposited films and linear ohmic contact resistance after postannealing treatments. In addition, the results on contact resistance, resistivity, carrier concentration, and Hall mobility of wafers extracted from Ti–Al metal contact to Si (100) are presented and discussed. 
    more » « less
  4. This research explores Microwave Plasma Chemical Vapor Deposition (MPCVD) for depositing diamond films on steel alloys (316L, 4140, and 1018) with a vanadium carbide interlayer to enhance adhesion and compatibility. The study reveals that a soft vanadium carbide interlayer and the FCC lattice match lead to a Ta-C film. The results of the graphite inhibition and diamond deposition varied with the steel alloy underlayer composition. In the 316L steel alloy, we successfully formed a thick, compressive strain-induced, sp3-bonded tetrahedral amorphous carbon layer without graphite. The findings have wide-ranging applications in environments demanding high durability and thermal conductivity. 
    more » « less
  5. A protocol for successfully depositing [001] textured, 2–3 µm thick films of Al0.75Sc0.25N, is proposed. The procedure relies on the fact that sputtered Ti is [001]-textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti film during reactive sputtering of Al0.75,Sc0.25N likely forms a [111]-oriented TiN intermediate layer. The lattice mismatch of this very thin film with Al0.75Sc0.25N is ~3.7%, providing excellent conditions for epitaxial growth. In contrast to earlier reports, the Al0.75Sc0.25N films prepared in the current study are Al-terminated. Low growth stress (<100 MPa) allows films up to 3 µm thick to be deposited without loss of orientation or decrease in piezoelectric coefficient. An advantage of the proposed technique is that it is compatible with a variety of substrates commonly used for actuators or MEMS, as demonstrated here for both Si wafers and D263 borosilicate glass. Additionally, thicker films can potentially lead to increased piezoelectric stress/strain by supporting application of higher voltage, but without increase in the magnitude of the electric field. 
    more » « less