Behera, Aroop K, Harris, C Thomas, Pete, Douglas V, Smyth, Christopher M, Muniz, Marta B, Koybasi, Ozhan, Taniguchi, Takashi, Watanabe, Kenji, Belle, Branson D, and Das, Suprem R. Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors. Retrieved from https://par.nsf.gov/biblio/10534844. ACS Applied Nano Materials 7.11 Web. doi:10.1021/acsanm.4c00367.

Behera, Aroop K, Harris, C Thomas, Pete, Douglas V, Smyth, Christopher M, Muniz, Marta B, Koybasi, Ozhan, Taniguchi, Takashi, Watanabe, Kenji, Belle, Branson D, & Das, Suprem R. Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors. ACS Applied Nano Materials, 7 (11). Retrieved from https://par.nsf.gov/biblio/10534844. https://doi.org/10.1021/acsanm.4c00367

Behera, Aroop K, Harris, C Thomas, Pete, Douglas V, Smyth, Christopher M, Muniz, Marta B, Koybasi, Ozhan, Taniguchi, Takashi, Watanabe, Kenji, Belle, Branson D, and Das, Suprem R. "Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors". ACS Applied Nano Materials 7 (11). Country unknown/Code not available: ACS. https://doi.org/10.1021/acsanm.4c00367. https://par.nsf.gov/biblio/10534844.

@article{osti_10534844,
place = {Country unknown/Code not available}, title = {Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors}, url = {https://par.nsf.gov/biblio/10534844}, DOI = {10.1021/acsanm.4c00367}, abstractNote = {}, journal = {ACS Applied Nano Materials}, volume = {7}, number = {11}, publisher = {ACS}, author = {Behera, Aroop K and Harris, C Thomas and Pete, Douglas V and Smyth, Christopher M and Muniz, Marta B and Koybasi, Ozhan and Taniguchi, Takashi and Watanabe, Kenji and Belle, Branson D and Das, Suprem R}, }