MgTe (110) semiconductor for a magnetic-element-free nonballistic spin-field-effect transistor
- Award ID(s):
- 2316003
- PAR ID:
- 10537731
- Publisher / Repository:
- APS
- Date Published:
- Journal Name:
- Physical Review B
- Volume:
- 109
- Issue:
- 8
- ISSN:
- 2469-9950
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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