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Title: Avoiding Plasma Damage: MacEtch enabled β-Ga 2 O 3 FinFETs for On-Resistance Reduction and Hysteresis Elimination
Award ID(s):
2200651
PAR ID:
10538512
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
IEEE
Date Published:
ISBN:
979-8-3503-3252-0
Page Range / eLocation ID:
1 to 3
Format(s):
Medium: X
Location:
Seoul, Korea, Republic of
Sponsoring Org:
National Science Foundation
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